System of measuring a resistance of a resistive memory device

Abstract

A system for measuring a resistance of a memory cell in a resistive memory device can include a pulse generator configured to apply a data write pulse and a resistance read pulse to the resistive memory device with a delay time. A connecting member can be connected between the pulse generator and the resistive memory device. A test measurement device can be connected to the resistive memory device outputting a pulse waveform and a data-processing member can be configured to determine the resistance of the resistive memory device using the pulse waveform and an internal resistance of the test measurement device.

1 . A system for measuring a resistance of a memory cell in a resistive memory device, the system comprising:
 a pulse generator configured to apply a data write pulse and a resistance read pulse to the resistive memory device with a delay time;   a connecting member connected between the pulse generator and the resistive memory device;   a test measurement device connected to the resistive memory device outputting a pulse waveform; and   a data-processing member configured to determine the resistance of the resistive memory device using the pulse waveform and an internal resistance of the test measurement device.