US2009045484A1PendingUtilityA1

Methods and systems involving electrically reprogrammable fuses

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Assignee: IBMPriority: Aug 16, 2007Filed: Aug 16, 2007Published: Feb 19, 2009
Est. expiryAug 16, 2027(~1.1 yrs left)· nominal 20-yr term from priority
H10W 20/072H10W 20/46H10W 20/493G11C 17/16
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Claims

Abstract

An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

Claims

exact text as granted — not AI-modified
1 . An electrically reprogrammable fuse comprising:
 an interconnect disposed in a dielectric material;   a sensing wire disposed at a first end of the interconnect;   a first programming wire disposed at the first end of the   interconnect including a reservoir portion operative to receive displaced atoms and release stored atoms during electromigration;   a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire; and   a cavity formed between an upper portion of the interconnect and the dielectric material, wherein the cavity is configured to accelerate electromigration effects of the interconnect material during programming and reprogramming thereof.   
   
   
       2 - 18 . (canceled)

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