US2009061743A1PendingUtilityA1

Method of soft pad preparation to reduce removal rate ramp-up effect and to stabilize defect rate

46
Assignee: JEW STEPHENPriority: Aug 29, 2007Filed: Aug 21, 2008Published: Mar 5, 2009
Est. expiryAug 29, 2027(~1.1 yrs left)· nominal 20-yr term from priority
B24B 53/017B24B 53/003B24B 37/042
46
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Claims

Abstract

A method and apparatus for pre-conditioning a new soft polishing pad and processing a substrate on a soft polishing pad is described. The method includes coupling a soft polishing pad to a platen, contacting the processing surface of the soft polishing pad with a conditioning disk, applying a pressure conditioning disk, removing the conditioning disk from contact with the processing surface of the soft polishing pad, and contacting a first substrate with the processing surface of the soft polishing pad to perform a polishing process on the first substrate.

Claims

exact text as granted — not AI-modified
1 . A method for polishing a substrate, comprising:
 conditioning a processing surface of a soft polishing pad by rotating the soft polishing pad a first direction while contacting the soft polishing pad with a rotating diamond conditioning disk rotating a second direction;   applying a pressure of about 1 pound-force to about 4 pound-force to the rotating diamond conditioning disk;   removing the diamond conditioning disk from contact with the rotating processing surface of the soft polishing pad;   contacting a first substrate with the rotating processing surface of the soft polishing pad to perform a polishing process on the first substrate;   removing the first substrate from the rotating processing surface of the soft polishing pad;   conditioning the rotating processing surface of the soft polishing pad with a brush-type conditioning element rotating in the second direction; and   contacting a second substrate with the rotating processing surface of the soft polishing pad to perform a polishing process on the second substrate.   
   
   
       2 . The method of  claim 1 , further comprising:
 rinsing the soft polishing pad prior to contacting the second substrate with the soft polishing pad.   
   
   
       3 . The method of  claim 1 , wherein the first direction and the second direction are different. 
   
   
       4 . The method of  claim 1 , wherein the soft polishing pad includes a hydrophilic processing surface having a contact angle less than about 80°. 
   
   
       5 . The method of  claim 1 , wherein the soft polishing pad is rotated in the first direction at about 40 RPM to about 130 RPM. 
   
   
       6 . The method of  claim 1 , wherein the soft polishing pad is rotated in the first direction at about 50 RPM to about 75 RPM. 
   
   
       7 . The method of  claim 1 , wherein the conditioning disk is rotated in the second direction at about 60 RPM to about 120 RPM. 
   
   
       8 . The method of  claim 1 , wherein rotating the conditioning disk the second direction includes rotation at a second speed of about 90 RPM to about 110 RPM. 
   
   
       9 . The method of  claim 2 , wherein the rinse is provided at a pressure of about 25 psi to about 90 psi. 
   
   
       10 . The method of  claim 2 , wherein the rinse is provided at a pressure of about 40 psi to about 60 psi. 
   
   
       11 . A method for conditioning a soft polishing pad prior to polishing a substrate, comprising:
 coupling a soft polishing pad to a platen, the soft polishing pad having a contact angle of less than about 80°;   rotating the platen in a first direction at a first speed;   providing a pressure applied to a conditioning disk toward the soft polishing pad while simultaneously rotating the conditioning disk a second direction at a second speed; and   applying a fluid to the soft polishing pad.   
   
   
       12 . The method of  claim 11 , wherein the conditioning disk comprises a diamond material. 
   
   
       13 . The method of  claim 11 , wherein the first speed is about 50 RPM to about 75 RPM. 
   
   
       14 . The method of  claim 11 , wherein the second speed is about 90 RPM to about 110 RPM. 
   
   
       15 . The method of  claim 11 , wherein the pressure is about 1 pound-force to about 4 pound-force. 
   
   
       16 . The method of  claim 11 , wherein the fluid is deionized water at a pressure of about 40 psi to about 60 psi. 
   
   
       17 . A method for processing a substrate with a soft polishing pad, sequentially comprising:
 coupling a new, unused soft polishing pad to a platen;   providing rotational movement to the platen;   placing a rotating conditioning disk in contact with the polishing material at a downforce of about 1 pound-force to about 4 pound-force;   removing the rotating conditioning disk from contact with the soft polishing pad; and then   contacting a substrate with the soft polishing pad to perform a polishing process on the substrate.   
   
   
       18 . The method of  claim 17 , wherein the soft polishing pad includes a contact angle of less than about 80°. 
   
   
       19 . The method of  claim 17 , wherein the soft polishing pad includes a contact angle of between about 35° to about 46°. 
   
   
       20 . The method of  claim 17 , further comprising:
 contacting the soft polishing pad with a brush-type conditioner after the polishing process.

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