Precursors and processes for low temperature selective epitaxial growth

Abstract

This invention generally relates to low temperature epitaxy. More specifically, this invention relates to processes for achieving low temperature selective epitaxial growth by chemical vapor deposition of source precursors containing Si or Ge in the presence of bromine or iodine, compositions containing precursors and brominated or iodinated compounds suitable for achieving selective epitaxial growth using the processes, epitaxial layers made using the processes, devices and other types of structures made using the processes, and processes for cleaning epitaxy reactor chambers using a bromine etchant source.

1 . A low temperature process for selective growth of an epitaxial layer on a patterned substrate comprising:
 (a) introducing at least one patterned substrate into a deposition chamber;   (b) providing a substrate temperature within the chamber;   (c) providing a total pressure within the chamber; and   (d) introducing at least one source precursor and at least one compound into the deposition chamber, wherein the at least one compound comprises at least one element selected from the group consisting of Br and I; and   (e) maintaining the substrate temperature at less than about 750° C. for a period of time sufficient to selectively grow an epitaxial layer on the substrate.   
   
   
       2 . The process of  claim 1 , further comprising heating the at least one compound prior to introducing the at least one compound into the chamber. 
   
   
       3 . The process of  claim 1 , wherein the at least one compound is selected from the group consisting of Br 2  and HBr. 
   
   
       4 . The process of  claim 1 , further comprising mixing the at least one compound with a carrier gas prior to introducing the compound into the chamber. 
   
   
       5 . The process of  claim 1 , wherein chemical vapor deposition is used to selectively grow the epitaxial layer. 
   
   
       6 . The process of  claim 1 , wherein the at least one source precursor comprises at least one of Si, Ge, C, and Sn. 
   
   
       7 . The process of  claim 6 , wherein the at least one source precursor is selected from the group consisting of silanes, halosilanes, halodisilanes, halotrisilanes, halomethanes, silylmethanes, halosilylmethanes, halosilylhalomethanes and combinations thereof. 
   
   
       8 . The process of  claim 6  wherein the at least one source precursor is selected from the group consisting of germanes, halogermanes, halodigermanes, halomethanes, germylmethanes, halogermylmethanes, halogermylhalomethanes and combinations thereof. 
   
   
       9 . The process of  claim 1 , wherein the at least one compound is a bromine etchant source. 
   
   
       10 . The process of  claim 1 , wherein the at least one compound is a source precursor. 
   
   
       11 . The process of  claim 1 , wherein at least two compounds are introduced into the chamber. 
   
   
       12 . The process of  claim 11 , wherein at least one of the at least two compounds is a bromine etchant source and at least one of the at least two compounds is a source precursor. 
   
   
       13 . The process of  claim 1 , wherein at least two source precursors are introduced into the chamber. 
   
   
       14 . The process of  claim 13 , wherein at least one of the at least two precursors comprises bromine. 
   
   
       15 . The process of  claim 13 , wherein the at least one of the at least two precursors is a Br etchant source. 
   
   
       16 . The process of  claim 13 , wherein at least one of the at least two precursors comprises Ge and at least one of the at least two precursors comprises Si. 
   
   
       17 . The process of  claim 1 , wherein the at least one precursor comprises Si and the substrate temperature is less than about 750° C. 
   
   
       18 . The process of  claim 1 , wherein the at least one precursor comprises Ge and the substrate temperature is less than about 700° C. 
   
   
       19 . The process of  claim 1 , wherein the at least one precursor comprises Sn and the substrate temperature is less than about 650° C. 
   
   
       20 . The process of  claim 13 , wherein at least one of the at least two precursors comprises Sn, at least one of the at least two precursors comprises Ge, and the substrate temperature is less than about 500° C. 
   
   
       21 . The process of  claim 1 , wherein the substrate temperature is from about 400° C. to about 750° C., or any temperature range therein. 
   
   
       22 . The process of  claim 1 , wherein the total pressure is less than about 800 Torr. 
   
   
       23 . The process of  claim 1 , wherein at least one of the at least one compound, and at least one of the at least one source precursor, is selected from the group consisting of: 
     
       
         
               
               
               
             
                   
                   
               
                   
                 Br 4−x SiH x   
                 (x = 0–3); 
               
                   
                 (Br x H 3−x Si) 2   
                 (x = 1–2); 
               
                   
                 Br 4−x GeH x   
                 (x = 0–3); 
               
                   
                 (Br x H 3−x Ge) 2   
                 (x = 1–2); 
               
                   
                 I 4−x SiH x   
                 (x = 0–3); 
               
                   
                 (I x H 3−x Si) 2   
                 (x = 1–2); 
               
                   
                 I 4−x GeH x   
                 (x = 0–3); 
               
                   
                 (I x H 3−x Ge) 2   
                 (x = 1–2); and 
               
                   
                 SnD 4 . 
               
                   
                   
               
           
              
             
             
              
              
              
              
              
              
              
              
              
              
             
          
         
       
     
   
   
       24 . An epitaxial layer fabricated according to the process of  claim 1 . 
   
   
       25 . The epitaxial layer of  claim 24 , wherein the layer comprises at least one of Si, Ge, Sn, C, Br and I. 
   
   
       26 . A structure comprising the layer of  claim 25 . 
   
   
       27 . The structure of  claim 26 , wherein the structure is at least one of a MOSFET device, an emitter structure, an elevated source-drain structure, a heterojunction bipolar transistor structure, an epitaxial lateral overgrowth structure, a DRAM structure, an engineered substrate structure, and a component thereof. 
   
   
       28 . A process for cleaning residue from at least one surface inside a deposition chamber, the process comprising:
 (a) introducing at least one etchant source comprising bromine into the chamber;   (b) providing a temperature within the chamber;   (c) providing a total pressure within the chamber; and   (d) flowing the at least one etchant source for a period of time sufficient to remove a substantial portion of the residue.   
   
   
       29 . The process of  claim 28 , further comprising heating the at least one etchant source prior to introducing the source into the chamber 
   
   
       30 . The process of  claim 28 , further comprising mixing the at least one etchant source with a carrier gas prior to introducing the source into the chamber. 
   
   
       31 . The process of  claim 28 , wherein the at least one etchant source is selected from the group consisting of Br 2  and HBr. 
   
   
       32 . The process of  claim 28 , wherein the temperature is greater than about 550° C. 
   
   
       33 . The process of  claim 28 , wherein the total pressure is less than about 800 Torr. 
   
   
       34 . A surface cleaned according to the process of  claim 28 , wherein the surface is provided by at least one of a patterned substrate, an inner surface of the chamber, a chamber component, an object having no physical or functional connection with the chamber, and combinations thereof. 
   
   
       35 . A composition for selective epitaxial growth, wherein the composition comprises at least one source precursor and at least one compound, wherein the at least one compound comprises at least one element selected from the group consisting of Br and I. 
   
   
       36 . The composition of  claim 35 , wherein the at least one source precursor comprises at least one of Si, Ge, C, and Sn. 
   
   
       37 . The composition of  claim 36 , wherein the at least one source precursor is selected from the group consisting of silanes, halosilanes, halodisilanes, halotrisilanes, halomethanes, silylmethanes, halosilylmethanes, halosilylhalomethanes and combinations thereof. 
   
   
       38 . The composition of  claim 36  wherein the at least one source precursor is selected from the group consisting of germanes, halogermanes, halodigermanes, halomethanes, germylmethanes, halogermylmethanes, halogermylhalomethanes and combinations thereof. 
   
   
       39 . The composition of  claim 35 , wherein at least one compound is a bromine etchant source. 
   
   
       40 . The composition of  claim 35 , wherein the at least one compound is a source precursor. 
   
   
       41 . The composition of  claim 35 , wherein the composition comprises at least two compounds. 
   
   
       42 . The composition of  claim 41 , wherein at least one of the at least two compounds is a bromine etchant source and at least one of the at least two compounds is a source precursor. 
   
   
       43 . The composition of  claim 35 , wherein the composition comprises at least two source precursors. 
   
   
       44 . The composition of  claim 43 , wherein at least one of the at least two precursors comprises bromine. 
   
   
       45 . The composition of  claim 43 , wherein the at least one of the at least two precursors is a Br etchant source. 
   
   
       46 . The composition of  claim 43 , wherein at least one of the at least two precursors comprises Ge and at least one of the at least two precursors comprises Si.