Ultra-abrupt semiconductor junction profile

Abstract

The present invention discloses a method including: providing a substrate; forming recessed regions adjacent to both sides of a gate on the substrate; performing an angled co-implant of a species in two steps with two different energies and two different doses into the recessed regions; forming Silicon-Germanium in the recessed regions; forming source/drain extensions adjacent to both sides of the gate with a dopant; and performing an anneal to activate the dopant.

1 . An apparatus comprising:
 providing a channel region in a substrate;   a gate dielectric disposed over said channel region;   a gate disposed over said gate dielectric;   recessed regions disposed adjacent to both sides of said gate;   a dopant disposed at a depth in said recessed regions adjacent to both sides of said gate, said dopant comprising source-drain extensions;   one or more co-implanted species disposed slightly below said depth in said recessed regions;   raised source/drain disposed in said recessed regions; and   sidewall spacers disposed along two facing sides of said gate;   
   
   
       2 . The apparatus of  claim 1  wherein said one or more co-implanted species are at an angle tilted away from a normal incidence. 
   
   
       3 . The apparatus of  claim 1  further comprising said one or more co-implanted species also disposed slightly above said depth in said recessed regions. 
   
   
       4 . The apparatus of  claim 1  wherein said dopant is interstitial. 
   
   
       5 . The apparatus of  claim 1  wherein said dopant comprises Boron. 
   
   
       6 . The apparatus of  claim 1  wherein said one or more co-implanted species is substitutional. 
   
   
       7 . The apparatus of  claim 1  wherein said one or more co-implanted species comprises Fluorine implanted before Carbon. 
   
   
       8 . The apparatus of  claim 1  further comprising a pre-amorphization implant in said recessed regions. 
   
   
       9 . The apparatus of  claim 9  wherein said pre-amorphization implant comprises Silicon or Germanium. 
   
   
       10 . The apparatus of  claim 1  wherein said raised source/drain comprises Silicon Germanium filled into said recessed regions. 
   
   
       11 . The apparatus of  claim 1  further comprising a halo implant performed after said source/drain extension implant. 
   
   
       12 . An apparatus comprising:
 a source/drain extension having an ultra-abrupt semiconductor junction profile, said ultra-abrupt semiconductor profile comprising an interstitial dopant disposed slightly above one or more substitutional co-implanted species.   
   
   
       13 . The apparatus of  claim 15  comprising said interstitial dopant also disposed slightly below said one or more substitutional co-implanted species. 
   
   
       14 . The apparatus of  claim 15  wherein said interstitial dopant comprises Boron. 
   
   
       15 . The apparatus of  claim 15  wherein said substitutional co-implanted species comprises Carbon. 
   
   
       16 . The apparatus of  claim 1  wherein said co-implanted species is substitutional. 
   
   
       17 . An apparatus comprising:
 a substrate;   a source/drain extension disposed in said substrate;   a dopant disposed in said source/drain extension; and   a co-implanted species disposed slightly below a peak concentration of said dopant.   
   
   
       18 . The apparatus of  claim 17  wherein said co-implanted species is Carbon or Fluorine. 
   
   
       19 . The apparatus of  claim 17  further comprising said co-implanted species also disposed slightly above said peak concentration of said dopant. 
   
   
       20 . The apparatus of  claim 17  wherein said source/drain extension comprises an ultra-abrupt semiconductor junction profile.