Member for a Plasma Processing Apparatus and Method of Manufacturing the Same

Abstract

A member for a plasma processing apparatus, which is excellent in film-formability, durability, and reliability, is provided. On a substrate, a ceramic film having a purity not less than 98% is provided. In the ceramic film, grains constituting the film have a grain diameter not greater than 50 nm and the amount of moisture released from the film is not more than 10 19 molecules/cm 2 .

1 . A member for a plasma processing apparatus, the member comprising a substrate and a ceramic film formed thereon and having a purity not less than 98%, wherein:
 the ceramic film is constituted by grains having a grain diameter not greater than 50 nm, the amount of moisture released from the film being not more than 10 19  molecules/cm 2 .   
     
     
         2 . The member for a plasma processing apparatus as claimed in  claim 1 , the member comprising, as the ceramic film, a sol-gel film formed by a sol-gel method. 
     
     
         3 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein:
 the substrate is made of metal, ceramics, glass, or a composite material thereof;   the ceramic film being a film comprising at least one kind of element selected from group II-VI elements, group XII-XIV elements, and rare-earth elements in the periodic table.   
     
     
         4 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein the ceramic film is a film comprising at least one kind of element selected from Mg, Al, Si, Ti, Cr, Zn, Y, Zr, W, and the rare-earth elements. 
     
     
         5 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein the ceramic film has translucency represented by a transmittance not less than 80% in a visible light range at a wavelength between 400 and 800 nm when a film thickness is not greater than 5 μm. 
     
     
         6 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein the ceramic film is formed in an oxygen-containing atmosphere in a temperature range between 250 and 1200° C. 
     
     
         7 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein the ceramic film has a purity not less than 99.5%. 
     
     
         8 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein:
 the substrate is made of metal;   the substrate being provided with a film formed on its surface and obtained by passivation of the surface of the substrate.   
     
     
         9 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein:
 the substrate is made of aluminum;   the substrate being provided with an anodic oxidation film formed on its surface.   
     
     
         10 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein:
 the substrate is made of metal;   the substrate being provided with a film formed on its surface by heat treatment.   
     
     
         11 . The member for a plasma processing apparatus as claimed in  claim 1 , the member comprising, as the ceramic film, a sprayed film formed on the substrate by a spraying method and a sol-gel film formed on the sprayed film by a sol-gel method. 
     
     
         12 . The member for a plasma processing apparatus as claimed in  claim 1 , the member comprising, as the ceramic film, a sol-gel film formed on the substrate by a sol-gel method and a sprayed film formed on the sol-gel film by a spraying method. 
     
     
         13 . The member for a plasma processing apparatus as claimed in  claim 1 , wherein the substrate has a plate-like shape having pores, a tubular shape, or a container shape. 
     
     
         14 . A method of manufacturing a member for a plasma processing apparatus, comprising the step of forming a ceramic film having a purity not less than 98% on a substrate, wherein:
 the forming of the ceramic film is carried out so that grains constituting the film have a grain diameter not greater than 50 nm and the amount of moisture released from the film is not more than 10 19  molecules/cm 2 .   
     
     
         15 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , wherein, as the ceramic film, a sol-gel film is formed by a sol-gel method. 
     
     
         16 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising the steps of:
 forming the substrate made of metal, ceramics, glass, or a composite material thereof; and   forming, as the ceramic film, a film comprising at least one kind of element selected from group II-VI elements, group XII-XIV elements, and rare-earth elements in the periodic table.   
     
     
         17 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising the step of forming, as the ceramic film, a film comprising at least one kind of element selected from Mg, Al, Si, Ti, Cr, Zn, Y, Zr, W, and rare-earth elements. 
     
     
         18 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , wherein the ceramic film is formed in an oxygen-containing atmosphere in a temperature range between 250 and 1200° C. 
     
     
         19 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , wherein the ceramic film has a purity not less than 99.5%. 
     
     
         20 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising the steps of:
 forming the substrate made of metal; and   forming, on a surface of the substrate, a film obtained by passivation of the surface of the substrate.   
     
     
         21 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising the steps of:
 forming the substrate made of aluminum; and   forming an anodic oxidation film on a surface of the substrate.   
     
     
         22 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising the steps of:
 forming the substrate made of metal; and   forming a film formed by a heat treatment on a surface of the substrate.   
     
     
         23 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising, as the forming of the ceramic film, the steps of forming a sprayed film on the substrate by a spraying method and forming a sol-gel film on the sprayed film by a sol-gel method. 
     
     
         24 . The method of manufacturing a member for a plasma processing apparatus as claimed in  claim 14 , comprising, as the forming of the ceramic film, the steps of forming a sol-gel film on the substrate by a sol-gel method and forming a sprayed film on the sol-gel film by a spraying method.