US2009114850A1PendingUtilityA1

Apparatus and method for modifying an object

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Assignee: RAVE LLCPriority: Feb 2, 2005Filed: Jan 14, 2009Published: May 7, 2009
Est. expiryFeb 2, 2025(expired)· nominal 20-yr term from priority
H10P 50/667H10P 50/283H10P 14/69433H10P 14/60H10W 20/067H10P 50/644G03F 7/00C23F 1/00G21G 5/00H10P 50/642
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Claims

Abstract

A method and apparatus includes positioning a reactant on a surface in specific location and then directing an energy source from a device at the reactant such that it modifies the surface to either remove material or add material.

Claims

exact text as granted — not AI-modified
1 . An apparatus for modifying an object, comprising: a reactant that is positioned on the object; and
 an energy device configured to direct its output at the reactant in order to modify the object.   
   
   
       2 . The apparatus as in  claim 1 , further comprising an assembly that is configured to position the reactant on the object. 
   
   
       3 . The apparatus as in  claim 2 , wherein the assembly is a scanning probe microscope. 
   
   
       4 . The apparatus as in  claim 3 , wherein the reactant is positioned with a probe tip of the scanning probe microscope. 
   
   
       5 . The apparatus as in  claim 4 , wherein the reactant is placed on the probe tip through a hydrophilic process. 
   
   
       6 . The apparatus as in  claim 1 , wherein the energy device is an electromagnetic device. 
   
   
       7 . The apparatus as in  claim 1 , wherein the energy device is a laser. 
   
   
       8 . The apparatus as in  claim 1 , wherein the energy device is configured to directed radio waves at the sample. 
   
   
       9 . The apparatus as in  claim 1 , wherein in the object is a single layered device. 
   
   
       10 . The apparatus as in  claim 1 , wherein the object is comprised of at least two layers. 
   
   
       11 . The apparatus as in  claim 1 , wherein the object is a semiconductor device. 
   
   
       12 . The apparatus as in  claim 1 , wherein the reactant is configured to remove material from the object. 
   
   
       13 . The apparatus as in  claim 1 , wherein the reactant is configured to add material to the object. 
   
   
       14 . The apparatus as in  claim 13 , wherein the added material is a conductor. 
   
   
       15 . The apparatus as in  claim 13 , wherein the added material is an insulator. 
   
   
       16 . The apparatus as in  claim 11 , wherein the reactant is selected based upon the object. 
   
   
       17 . The apparatus as in  claim 10 , wherein one of the at least two layers is configured to act as a stop layer. 
   
   
       18 . The apparatus as in  claim 10 , wherein the reactant is configured to removed material from one of the at least two layers and not react with the second of the at least two layers. 
   
   
       19 . The apparatus as in  claim 11 , wherein the energy device is configured to increase a reaction time of the reactant on the object. 
   
   
       20 . The apparatus as in  claim 14 , wherein the reactant is placed on the probe tip through an electrostatic process. 
   
   
       21 . The apparatus as in  claim 17 , wherein the added material is linked to another portion of the object. 
   
   
       22 . The apparatus as in  claim 11 , further comprising a probe assembly and fluid delivery channel. 
   
   
       23 . The apparatus as in  claim 11 , further comprising a debris removal means. 
   
   
       24 . The apparatus of  claim 11 , further comprising placing the reactant in multiple locations to create specific shaped features.

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