Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices

Abstract

Improved cleaning compositions for removing particles, organic contamination, photoresist, post-ash residue, coatings, and other materials from metal and silicon surfaces including substrates present during the manufacture of integrated circuits, liquid crystal displays, and photovoltaic devices. The cleaning and surface preparation compositions comprise one or more water soluble strongly basic components, one or more water soluble organic amines, one or more water soluble oxidizing agents, balance water. Optional components can include corrosion inhibitors, surfactants and chelating agents.

1 . A liquid cleaning composition for removing particles, organic contamination, photoresist, post-ash residue, coatings, and other materials from metal and silicon surfaces containing a major portion of water with an effective amount of a water soluble strong base, an effective amount of water soluble organic amine, and an effective amount of a water soluble oxidizing agent. 
   
   
       2 . A liquid cleaning composition for removing particles, organic contamination, photoresist, post-ash residue, coatings, and other materials from metal and silicon surfaces comprising 0.1 to 10% by volume of a water soluble strong base, 0.1 to 20% by volume water soluble organic amine, 0.1 to 10% by volume water soluble oxidizing agent, balance water 
   
   
       3 . A composition according to  claim 1  wherein the water soluble amine is present in an amount form 1 to 10% by volume. 
   
   
       4 . A composition according to  claim 1  wherein the base is selected from the group consisting of tetramethylammonium hydroxide, potassium hydroxide, benzyltrimethylammonium hydroxide and tetrabutylammonium hydroxide and mixtures thereof. 
   
   
       5 . A composition according to  claim 1  where the amine is selected from the group consisting of 2-aminoethanol, 2-(2-aminoethylamino)ethanol, 4-(3-aminopropyl)morpholine, 1-amino-2-propanol and mixtures thereof. 
   
   
       6 . A composition according to  claim 1  wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide and N-methylmorpholine-N-oxide and mixtures thereof. 
   
   
       7 . A composition according to  claim 1  wherein the water soluble strong base produces a pH greater than 10. 
   
   
       8 . A composition according to  claim 1  where the water soluble strong base produces a pH greater than 12. 
   
   
       9 . A composition according to  claim 1  including addition of optional components selected from the group consisting of corrosion inhibitors, surfactants, chelating agents and mixtures thereof. 
   
   
       10 . A composition according to  claim 6  wherein the chelating agent is cyclohexane-1,2-diaminetetraacetic acid. 
   
   
       11 . A liquid cleaning composition according to  claim 1  wherein the strong base is selected from the group consisting of sodium hydroxide, potassium hydroxide, benzyltrimethyl ammonium hydroxide, trimethyl-2-hydroxyethyl ammonium hydroxide (choline), trimethyl-3-hydroxypropyl ammonium hydroxide, trimethyl-3-hydroxybutyl ammonium hydroxide, trimethyl-4-hydroxybutyl ammonium hydroxide, triethyl-2-hydroxyethyl ammonium hydroxide, tripropyl-2-hydroxyethyl ammonium hydroxide, tributyl-2-hydroxyethyl ammonium hydroxide, dimethylethyl-2-hydroxyethyl ammonium hydroxide, dimethyldi(2-hydroxyethyl) ammonium hydroxide, monomethyltri(2-hydroxyethyl) ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, monomethyltriethyl ammonium hydroxide, monomethyltripropyl ammonium hydroxide, monomethyltributyl ammonium hydroxide, monoethyltrimethyl ammonium hydroxide, monoethyltributyl ammonium hydroxide, and the like and mixtures thereof, the water soluble amine is selected from the group consisting of 2-aminoethanol, 2-(2-aminoethylamino)ethanol, 4-(3-aminopropyl)morpholine, 1-amino-2-propanol, 1-amino-3-propanol, 2-(2-aminoethoxy)ethanol, 2-methylaminoethanol, 2-dimethylaminoethanol, diethanolamine, triethanolamine, tris(hydroxymethyl)-aminomethane, 2-dimethylamino-2-methyl-1-propanol, 1,3-pentanediamine, 4-aminomethyl-1,8-octanediamine, 2-aminoethylpiperazine, 2-(2-aminoethylamino)ethylamine, 1,2-diaminocyclohexane, tris(2-aminoethyl)amine, and 2-methyl-1,5-pentanediamine and mixtures thereof, and the water soluble oxidizing agent is selected from the group consisting of hydrogen peroxide or N-methylmorpholine-N-oxide, organic peracids, urea peroxide, and organic or inorganic perborates, percarbonates, or persulfates and mixtures thereof. 
   
   
       12 . A liquid cleaning composition according to  claim 6  wherein the water soluble corrosion inhibitor is selected from the group consisting of resorcinol, triazoles, tetrazoles, 8-hydroxyquinoline, benzoic acid, and phthalic acids, salts of the acids, anhydrides of the acids, esters of the acids, boric acid, base soluble borate and silicate salts, polyhydroxy alcohols, such as ethylene glycol, propylene glycol, glycerol, and 1-hydroxyalkyl-2-pyrrolidones such as 1-(2-hydroxyethyl)-2-pyrrolidone and mixtures thereof, the surfactants are selected from the group consisting of alkyl betaines, amidoalkyl betaines, alkyl sulfobetaines, and aminoalkyl sulfobetaines; aminocarboxylic acid derivatives such as amphoglycinates, amphopropionates, amphodiglycinates, and amphodipropionates, iminodiacids such as alkoxyalkyl iminodiacids; fluorinated alkyl amphoterics, and mixtures thereof, acetylenic diols, ethoxylated acetylenic diols, fluorinated alkyl alkoxylates, fluorinated alkylesters, fluorinated polyoxyethylene alkanols, aliphatic acid esters of polyhydric alcohols, polyoxyethylene monoalkyl ethers, polyoxyethylene diols, and siloxane type surfactants, and mixtures thereof, carboxylates, N-acylsarcosinates, sulfonates, fluoroalkyl sulfonates, sulfonic acids, sulfates, and mono- and diesters of orthophosphoric acid such as decyl phosphate, and mixtures thereof, metal-ion free sulfonic acids and sulfonic acid salts, dodecylbenzenesulfonic acid and ammonium lauryl sulfate, amine ethoxylates, dialkyldimethyl ammonium salts, dialkylmorpholinum salts, alkylbenzyldimethyl ammonium salts, alkyltrimethyl ammonium salts, and alkylpyridinium salts, and mixtures thereof, and the chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), butylenediaminetetraacetic acid, cyclohexane-1,2-diaminetetraacetic acid (CyDTA), diethylenetriaminepentaacetic acid (DETPA), ethylenediaminetetraproprionic acid, (hydroxyl)ethylenediaminetriacetic acid (HEDTA), N,N,N′,N′-ethylenediaminetetra (methylenephosphonic) acid (EDTMP), triethylenetetraminehexaacetic acid (TTHA), 1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid (DHPTA), methyliminodiacetic acid, propylenediaminetetraacetic acid, nitrilotriacetic acid (NTA), citric acid, tartaric acid, gluconic acid, saccharic acid, glyceric acid, phthalic acid, maleic acid, mandelic acid, malonic acid, lactic acid, salicylic acid, and cystine and mixtures thereof. 
   
   
       13 . A method for cleaning contaminants being one of, particles, organic contamination, post-ash residue, coatings and other materials from metal and silicon surfaces comprising the steps of:
 exposing a surface coating of one or more of said contaminants to a composition consisting of 0.1 to 10% by volume of a strong base, 0.1 to 20% by volume water soluble organic amine, 0.1 to 10% by volume water soluble oxidizing agent, balance water at a temperature of from 110° C. to 85° C. for a period of time from ten seconds to five minutes; and   rinsing said surface in de-ionized water.   
   
   
       14 . A method according to  claim 13  wherein an optional drying step is included after said rinsing step. 
   
   
       15 . A method according to  claim 13  including the step of controlling the composition to have a pH greater than 10. 
   
   
       16 . A method according to  claim 13  including the step of controlling the composition to have H greater than 12.