Method for producing semi-conducting devices and devices obtained with this method

Abstract

A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

1 . A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of oxygen as a result of a treatment for avoiding the contamination of said another layer by the doping agent. 
     
     
         2 . The semi-conducting device of  claim 1 , wherein the content of oxygen is higher than 10 19  atoms·cm −3 . 
     
     
         3 . A semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer, wherein the interface between said layers contains traces of nitrogen as a result of a treatment for avoiding the contamination of said another layer by the doping agent. 
     
     
         4 . The semi-conducting device of  claim 3 , wherein the content of nitrogen is higher than 10 19  atoms·cm −3 . 
     
     
         5 . The semi-conducting device of  claim 1 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising water, methanol, isopropanol or another alcohol without plasma. 
     
     
         6 . The semi-conducting device of  claim 3 , wherein said treatment comprises dosing a reaction chamber where said doped layer and other layer are deposited, intermediate deposition of the respective layers, with a vapour or gas comprising ammonia, hydrazine or volatile organic amines without plasma. 
     
     
         7 . The semi-conducting device of  claim 5 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes. 
     
     
         8 . The semi-conducting device of  claim 6 , wherein said dosing is performed at around 0.05 to 100 mbar and between 100 and 350° C. for less than 10 minutes. 
     
     
         9 . The semi-conducting device of  claim 1 , wherein the doped layer is a p-doped layer. 
     
     
         10 . The semi-conducting device of  claim 1 , wherein the doped layer is a n-doped layer. 
     
     
         11 . The semi-conducting device of  claim 3 , wherein the doped layer is a p-doped layer. 
     
     
         12 . The semi-conducting device of  claim 3 , wherein the doped layer is a n-doped layer. 
     
     
         13 . The semi-conducting device of  claim 1 , further comprising a buffer layer intermediate said doped layer and said other layer. 
     
     
         14 . The semi-conducting device of  claim 3 , further comprising a buffer layer intermediate said doped layer and said other layer. 
     
     
         15 . The semi-conducting device of  claim 5 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer. 
     
     
         16 . The semi-conducting device of  claim 6 , wherein said dosing is followed by the deposition of a buffer layer on said doped layer. 
     
     
         17 . The semi-conducting device of  claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes. 
     
     
         18 . The semi-conducting device of  claim 5 , wherein said dosing is followed by said reaction chamber pumping at high vacuum between 100 and 350° C. for less than 5 minutes. 
     
     
         19 . The semi-conducting device of  claim 1 , said doped layer being a plasma-deposited doped layer. 
     
     
         20 . The semi-conducting device of  claim 3 , said doped layer being a plasma-deposited doped layer. 
     
     
         21 . The semi-conducting device of  claim 6 , wherein said doping agent comprises trimethylboron.