Template Pillar Formation

Abstract

Materials for forming an imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.

1 . A method comprising:
 identifying a first physical property of a first material to determine a first estimated erosion rate of the first material, the first material having a first reflectance;   identifying a second physical property of a second material to determine a second estimated erosion rate of the second material, the first material disposed on the second material;   selecting a process pressure for a reactive ion etching process for etching the first material and the second material;   adjusting the process pressure during the reactive ion etching process based on the first estimated erosion rate and the second estimated erosion rate; and,   monitoring a reflectance of the second material to provide substantially uniform erosion of the second material.   
     
     
         2 . The method of  claim 1 , further comprising:
 selecting a RF power for the reactive ion etching process; and,   adjusting the RF power during the reactive ion etching process based on the first estimated erosion rate and the second estimated erosion rate.   
     
     
         3 . The method of  claim 1 , further comprising:
 selecting a gas flow rate for the reactive ion etching process; and,   adjusting the gas flow rate during the reactive ion etching process based on the first estimated erosion rate and the second estimated erosion rate.   
     
     
         4 . The method of  claim 1 , wherein the first physical property is a thickness of the first material. 
     
     
         5 . The method of  claim 1 , wherein the second physical property is a thickness of the second material. 
     
     
         6 . The method of  claim 1 , wherein the erosion rate of the first material is less than the erosion rate of the second material. 
     
     
         7 . The method of  claim 1 , wherein the first material is a hard mask layer. 
     
     
         8 . The method of  claim 7 , wherein the second material is a conducting layer. 
     
     
         9 . The method of  claim 8 , further comprising:
 identifying a third physical property of a third material to evaluate a depth for pattern transfer, the second material disposed on the third material; and,   monitoring the reflectance of the second material and a reflectance of the third material to determine a targeted etch time for etching the third material based on the evaluated depth for pattern transfer.   
     
     
         10 . The method of  claim 9 , wherein the third physical property is a thickness of the third material. 
     
     
         11 . The method of  claim 9 , wherein the third material is a substrate layer. 
     
     
         12 . The method of  claim 9 , wherein etching of the third material provides an imprint lithography template. 
     
     
         13 . A method comprising:
 identifying a first erosion rate of a first material;   identifying a second erosion rate of a second material, the first material disposed on the second material;   identifying a third erosion rate of a third material, the second material disposed on the third material;   etching the first material and the second material using a reactive ion etching process;   adjusting pressure and gas flow rate of the reactive ion etching process based on the first erosion rate and the second erosion rate; and,   monitoring reflectance of the second material and the third material to provide substantially uniform erosion of the second material and the third material resulting in an imprint lithography template.