Non-volatile memory device with plural reference cells, and method of setting the reference cells

Abstract

A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.

1 . A non-volatile memory device comprising:
 an array of non-volatile memory cells;   a first plurality of non-volatile memory reference cells, each capable of being programmed to a reference level different from the other reference cells; and   a second plurality of comparators, each connectable to one of said first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among said array of non-volatile memory cells.   
   
   
       2 . The device of  claim 1  wherein each of said second plurality of comparators is connectable to a different one of said first plurality of non-volatile memory reference cells. 
   
   
       3 . The device of  claim 1  wherein the second plurality is divided into groups of comparators, with each group having a fourth plurality of comparators, and each of the group of said second plurality of comparators is connectable to a different one of said first plurality of non-volatile memory reference cells. 
   
   
       4 . The device of  claim 1  wherein each memory cell is an SLC memory cell. 
   
   
       5 . The device of  claim 1  wherein each memory cell is an MLC memory cell. 
   
   
       6 . The device of  claim 1  wherein each non-volatile memory reference cell is programmed to a reference voltage different from the voltage in the other reference cells. 
   
   
       7 . The device of  claim 1  wherein each non-volatile memory reference cell is programmed to a reference current different from the current in the other reference cells. 
   
   
       8 . The device of  claim 3  wherein each non-volatile memory reference cell which is connectable to a group of said second plurality of comparators is programmed to a median value of reference level for each group of comparators. 
   
   
       9 . A method of programming a first plurality of reference cells in a memory device having an array of non-volatile memory cells and a second plurality of comparators, comprising:
 (i) programming one of said first plurality of reference cells;   (ii) reading said programmed reference cell and comparing same to a reference signal using one of said second plurality of comparators; wherein said one of said second plurality of comparators is associated with said one programmed reference cell   (iii) continuing the programming of said one of said first plurality of reference cells based upon said comparison; and   repeating the steps of (i)-(iii) for a different one of said first plurality of reference cells, and its associated comparators, until all of said first plurality of reference cells are programmed.   
   
   
       10 . The method of  claim 9 , further comprising:
 wherein the programming step (i), programs said first plurality of reference cells in parallel;   wherein the reading step (ii) reads each of said programmed first plurality of reference cells and compares each to a reference signal using a different one of said second plurality of comparators, wherein a different one of said second plurality of comparators is associated with each one of said programmed first plurality of reference cells;   wherein said method further comprising: deselecting the reference cells among said first plurality of reference cells which have passed verification after step (ii); and   wherein the step of continuing (iii) continues the programming of reference cells which have not been deselected.   
   
   
       11 . The method of  claim 9  wherein said continuing of programming is done by adjusting program conditions so as to maintain a substantially constant rate of electron injection. 
   
   
       12 . The method of  claim 9  wherein said one of said first plurality of reference cells is associated with a third plurality of comparators, wherein said third plurality of comparators is a subset of said second plurality of comparators, and said reading step reads said programmed reference cells and the read signal is compared to a reference signal for each one of said third plurality of comparators. 
   
   
       13 . The method of  claim 11  wherein the programming of said one of said first plurality of reference cells is continued in the event the reading of more than one half of said third plurality of comparators shows the reference cell is under programmed. 
   
   
       14 . The method of  claim 9 , wherein each reference cell from the first plurality of reference cells has an associated different comparator from the second plurality of comparators. 
   
   
       15 . A method of programming a first plurality of reference cells in a memory device having an array of non-volatile memory cells and a second plurality of comparators comprising:
 (i) programming one of said first plurality of reference cells;   (ii) programming a third plurality of non-volatile memory cells, wherein said third plurality is associated with one of said second plurality of comparators;   (iii) reading said third plurality of non-volatile memory cells using one of said second plurality of comparators;   (iv) continuing the programming of said third plurality of non-volatile memory cells based upon said comparison;   (v) measuring the read signals of the third plurality of non-volatile memory cells;   (vi) calculating the median value of the signals from the measured signals of the third non-volatile memory cells; and   (vii) continuing the programming of said one of said first plurality of reference cells based upon said calculation.   
   
   
       16 . The method of  claim 15  further comprising:
 wherein the programming step (i) programs said first plurality of reference cells in parallel;   wherein the reading step (iii) reads each of said plurality of non-volatile memory cells using a different one of said second plurality of comparators   wherein the calculating step (vi) calculates the median value of the signals from the measured signals of the third non-volatile memory cells associated with a different one of each of said first plurality of reference cells;   wherein said method further comprising: deselecting reference cells from said first plurality of reference cells based upon said calculation, after step (vi); and   wherein the continuing step (viii) continues the programming of reference cells from the first plurality of reference cells which have not been deselected.   
   
   
       17 . The method of  claim 15  further comprising:
 repeating the steps of (i)-(vii) for a different one of said first plurality of reference cells.   
   
   
       18 . The method of  claim 15  wherein said continuing of programming is done by adjusting program conditions so as to maintain a substantially constant rate of electron injection. 
   
   
       19 . The method of  claim 15  wherein said one of said first plurality of reference cells is associated with a third plurality of comparators, wherein said third plurality of comparators is a subset of said second plurality of comparators, and said reading step reads said programmed reference cells and the read signal is compared to a reference signal for each one of said third plurality of comparators. 
   
   
       20 . The method of  claim 15 , wherein each reference cell ftom the first plurality of reference cells has an associated different comparator from the second plurality of comparators. 
   
   
       21 . A method of programming a first plurality of reference cells in a memory device having an array of non-volatile memory cells and a second plurality of comparators comprising:
 (i) programming one of said first plurality of reference cells;   (ii) measuring the read signal of the programmed reference cell;   (iii) comparing the read signal of the programmed reference cell measured to a first pre-determined value;   (iv) continuing the programming of said first plurality of reference cells based upon said comparison;   (v) programming a third plurality of non-volatile memory cells, wherein said third plurality is associated with one of said second plurality of comparators;   (vi) reading said third plurality of non-volatile memory cells programmed using one of said second plurality of comparators;   (vii) continuing the programming of the third plurality of non-volatile memory cells based upon said reading;   (viii) measuring the read signals of the third plurality of non-volatile memory cells;   (ix) calculating the median value of the read signals from the third plurality of non-volatile memory cells measured;   (x) continuing the programming of said one of said first plurality of reference cells;   (xi) measuring the read signal of the programmed reference cell;   (xii) comparing the read signal of the programmed reference cell measured to a second pre-determined value; and   (xiii) continuing the programming of said first plurality of reference cells based upon said comparison.   
   
   
       22 . The method of  claim 21  further comprising:
 repeating the steps of (i)-(x) for a different one of said first plurality of reference cells.   
   
   
       23 . The method of  claim 21  wherein said continuing of programming is done by adjusting program conditions so as to maintain a substantially constant rate of electron injection. 
   
   
       24 . The method of  claim 21  further comprising:
 wherein the programming step (i) programs said first plurality of reference cells in parallel;   wherein the measuring step (ii) measures the read signal of each of the programmed first plurality of reference cells   wherein the comparing step (iii) compares the measured read signal of each of the programmed first plurality of reference cells using a different one of the second plurality of comparators, wherein a different one of said second plurality of comparators is associated with each one of said programmed first plurality of reference cells;   wherein the method further comprising: deselecting the reference cells among the first plurality of reference cells which have passed verification;   wherein the continuing step (iv) continues the programming of the first plurality of reference cells which have not been deselected;   wherein the reading step (vi) reads each of said third plurality of non-volatile memory cells using a different one of said second plurality of comparators;   wherein the calculating step (ix) calculates the median value of the signals from the measured signals of the third non-volatile memory cells associated with a different one of each of said first plurality of reference cells;   wherein said method further comprising: deselecting reference cells from said first plurality of reference cells based upon said calculation after step (ix);   wherein the continuing step (x) continues the programming of references cells from the first plurality of reference cells which have not been deselected.   
   
   
       25 . The method of  claim 21 , wherein each reference cell from the first plurality of reference cells has an associated different comparator from the second plurality of comparators.