Semiconductor chip and method for manufacturing the same and semiconductor device

Abstract

The semiconductor chip 1 has a semiconductor substrate 10 . In the present embodiment, the semiconductor substrate 10 , which is an SOI substrate, is constituted by comprising a support substrate 12 , an insulating layer 14 formed on the support substrate 12 with a layered structure, and a silicon layer 16 formed on the insulating layer 14 with the layered structure. The semiconductor substrate 10 has a circuit forming region A 1 provided in the silicon layer 16 . An insulating region 18 is provided on the semiconductor substrate 10 . The insulating region 18 is provided so as to surround the entire side face of the circuit forming region A 1.

1 . A semiconductor device comprising:
 a first semiconductor chip having a circuit forming region, a first interconnect layer provided on one face of said circuit forming region, an insulating layer contacting another face of said circuit forming region, and a first insulating region surrounding the entire side face of said circuit forming region; and   a base semiconductor substrate having a second interconnect layer, wherein said first semiconductor chip is stacked on said base semiconductor substrate, and said first interconnect layer of said first semiconductor chip faces said second interconnect layer of said base semiconductor substrate.   
     
     
         2 . The semiconductor device according to  claim 1  further comprising a second semiconductor chip having a third interconnect layer, wherein said second semiconductor chip is stacked on said first semiconductor chip, and said third interconnect layer of said second semiconductor chip faces said another face of said circuit forming region of said first semiconductor chip each other. 
     
     
         3 . The semiconductor device according to  claim 1  wherein the size of said base semiconductor substrate is larger than a substrate of said first semiconductor chip.