Magnetic Memory Devices Including Conductive Capping Layers

Abstract

A magnetic memory device includes a first magnetic layer having opposing sidewalls, a tunnel barrier layer on the first magnetic layer, the tunnel barrier layer having a top surface and having opposing sidewalls aligned with the opposing sidewalls of the first magnetic layer, and a second magnetic layer on the tunnel barrier layer, the second magnetic layer having a bottom surface that is narrower than the top surface of the tunnel barrier layer and opposing sidewalls that are spaced apart from the opposing sidewalls of the tunnel barrier layer. A conductive capping layer having opposing sidewalls aligned with the opposing sidewalls of the second magnetic layer is on the second magnetic layer.

1 . A magnetic memory device, comprising:
 a first magnetic layer having opposing sidewalls;   a tunnel barrier layer on the first magnetic layer, the tunnel barrier layer having a top surface and having opposing sidewalls aligned with the opposing sidewalls of the first magnetic layer;   a second magnetic layer on the tunnel barrier layer, the second magnetic layer having a bottom surface that is narrower than the top surface of the tunnel barrier layer and having opposing sidewalls that are spaced apart from the opposing sidewalls of the tunnel barrier layer; and   a conductive capping layer on the second magnetic layer, the conductive capping layer having opposing sidewalls aligned with the opposing sidewalls of the second magnetic layer.   
     
     
         2 . The magnetic memory device of  claim 1 , wherein the first magnetic layer comprises a pinning layer, a first pinned layer, an inversion layer, and a second pinned layer,
 wherein the first and second pinned layers comprise a ferromagnetic material, the pinning layer comprises an antiferromagnetic material configured to fix a magnetization orientation of the first pinned layer, and the inversion layer is configured to fix a magnetization orientation of the second pinned layer to be opposite to the magnetization orientation of the first pinned layer.   
     
     
         3 . The magnetic memory device of  claim 2 , wherein the tunnel barrier layer comprises aluminum oxide and/or magnesium oxide.