Inventor · disambiguated record
Jun-Soo Bae
Also filed as: BAE JUN-SOO
35 granted patents·8 pending applications·675 citations·filing 2004–2017
98Inventor score
Top patents by PatentIndex Score
43 records- 0198US7351594B2Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·102 cites·29 claims
- 0297US8134866B2Phase change memory devices and systems, and related programming methodsBAE JUN-SOO·Filed 2010·Granted Mar 13, 2012·64 cites·20 claims
- 0397US8050084B2Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 1, 2011·42 cites·19 claims
- 0497US7352021B2Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·96 cites·14 claims
- 0595US7425735B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 16, 2008·38 cites·24 claims
- 0694US8139432B2Variable resistance memory device and system thereofCHOI BYUNG-GIL·Filed 2010·Granted Mar 20, 2012·21 cites·19 claims
- 0794US7800095B2Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·35 cites·20 claims
- 0894US7615401B2Methods of fabricating multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 10, 2009·33 cites·21 claims
- 0993US7558100B2Phase change memory devices including memory cells having different phase change materials and related methods and systemsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·31 cites·54 claims
- 1091US7767568B2Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·17 cites·11 claims
- 1190US8116117B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·22 cites·15 claims
- 1289US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 1388US7541199B2Methods of forming magnetic memory devices including oxidizing and etching magnetic layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·14 cites·16 claims
- 1487US8143653B2Variable resistance memory device and system thereofCHO WOO-YEONG·Filed 2009·Granted Mar 27, 2012·14 cites·8 claims
- 1586US7778066B2Resistance variable memory device and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·17 cites·20 claims
- 1684US7787278B2Resistance variable memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·15 cites·20 claims
- 1781US10164173B2Magnetic random access memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·7 claims
- 1876US7692176B2Phase-changeable memory devices including an adiabatic layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 6, 2010·6 cites·15 claims
- 1976US7218556B2Method of writing to MRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·10 cites·20 claims
- 2073US8035145B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·2 cites·19 claims
- 2173US7645619B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·5 cites·19 claims
- 2273US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 2370US7582890B2Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·34 claims
- 2468US8168535B2Method fabricating semiconductor device using multiple polishing processesBAE JUN-SOO·Filed 2011·Granted May 1, 2012·2 cites·20 claims
- 2567US7943918B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 17, 2011·4 cites·18 claims
- 2665US7638788B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·2 cites·27 claims
- 2763US8238147B2Multi-level phase change memory device, program method thereof, and method and system including the sameBAE JUN-SOO·Filed 2008·Granted Aug 7, 2012·5 cites·19 claims
- 2862US7372090B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·12 claims
- 2955US8237141B2Non-volatile memory device including phase-change materialKANG MYUNG-JIN·Filed 2010·Granted Aug 7, 2012·1 cites·10 claims
- 3055US2009230445A1Magnetic Memory Devices Including Conductive Capping LayersBAE JUN-SOO·Filed 2009·Application pending·0 cites
- 3154US8772121B2Phase change memory devices and methods of manufacturing the sameHWANG KYU-MAN·Filed 2012·Granted Jul 8, 2014·1 cites·14 claims
- 3254US2009283741A1Method of forming a phase changeable structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3351US7582568B2Method of forming a phase changeable structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 1, 2009·0 cites·12 claims
- 3449US8513051B2Methods of forming phase-changeable memory devices including an adiabatic layerHA YONG-HO·Filed 2010·Granted Aug 20, 2013·0 cites·9 claims
- 3549US7732222B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·0 cites·16 claims
- 3647US7569430B2Phase changeable structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·0 cites·14 claims
- 3745US2007166870A1Method of forming a phase-changeable structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3841US9761792B2Magnetic random access memory devices and methods of manufacturing the sameHWANG KYU-MAN·Filed 2015·Granted Sep 12, 2017·0 cites·8 claims
- 3941US2007230242A1Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and SubstratesLEE JANG E·Filed 2007·Application pending·0 cites
- 4040US2007206411A1Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related MethodsLEE JANG E·Filed 2007·Application pending·0 cites
- 4139US2007041125A1Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4236US2006027846A1Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methodsLEE JANG-EUN·Filed 2005·Application pending·0 cites
- 4335US2009278107A1Phase change memory deviceKIM DO-HYUNG·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →