Plasma and electron beam etching device and method

Abstract

Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

1  A semiconductor processing system, comprising:
 a reaction chamber;   a focused electron beam source to provide an electron beam to a semiconductor surface within the reaction chamber;   a number of chemical source devices, including:
 a plasma source coupled to the reaction chamber; 
 a gas source coupled to the reaction chamber; 
   wherein, when in operation, the focused electron beam interacts with chemicals provided by at least one of the chemical source devices to create reactive species.   
   
   
       2 . The semiconductor processing system of  claim 1 , further including a beam rastering system and a secondary electron detector to image the surface. 
   
   
       3 . The semiconductor processing system of  claim 1 , wherein the gas source includes a noble gas source. 
   
   
       4 . The semiconductor processing system of  claim 1 , wherein the gas source includes a scavenger gas source to selectively remove halogen species from the reaction chamber. 
   
   
       5 . The semiconductor processing system of  claim 1 , wherein a scavenger gas source includes H 2  gas. 
   
   
       6 . The semiconductor processing system of  claim 1 , wherein the plasma source includes carbon and a halogen. 
   
   
       7 . The semiconductor processing system of  claim 1 , wherein the gas source includes a carbon-halogen gas source. 
   
   
       8 . A semiconductor processing system, comprising:
 a reaction chamber;   a focused electron beam source to provide an electron beam to a semiconductor surface within the reaction chamber;   a number of chemical source devices, including:
 a plasma source coupled to the reaction chamber; 
 a gas source coupled to the reaction chamber; 
   wherein, when in operation, the focused electron beam interacts with chemicals provided by at least one of the chemical source devices to create reactive species and concurrently deposit a coating on the semiconductor surface.   
   
   
       9 . The semiconductor processing system of  claim 8 , wherein the plasma source includes a fluorine plasma source. 
   
   
       10 . The semiconductor processing system of  claim 8 , wherein the gas source includes both a carbon-fluorine gas and a noble gas source. 
   
   
       11 . The semiconductor processing system of  claim 10 , wherein the gas source further includes a hydrogen gas source. 
   
   
       12 . The semiconductor processing system of  claim 10 , wherein the gas source further includes an oxygen gas source. 
   
   
       13 . A semiconductor processing system, comprising:
 a reaction chamber;   a focused electron beam source to provide an electron beam to a semiconductor surface within the reaction chamber;   rastering and imaging hardware to scan the semiconductor surface and image selected surface topography;   a number of chemical source devices, including:
 a plasma source coupled to the reaction chamber; 
 a gas source coupled to the reaction chamber; 
   wherein, when in operation, the focused electron beam interacts with chemicals provided by at least one of the chemical source devices to create reactive species and concurrently deposit a coating on the semiconductor surface.   
   
   
       14 . The semiconductor processing system of  claim 13 , wherein the rastering and imaging hardware includes a secondary electron detector. 
   
   
       15 . The semiconductor processing system of  claim 13 , further including elemental detection hardware. 
   
   
       16 . The semiconductor processing system of  claim 13 , wherein the gas source includes a CF 4  source. 
   
   
       17 . The semiconductor processing system of  claim 13 , wherein the gas source includes a CHF 3  source.