Semiconductor structure, method for manufacturing semiconductor structure and semiconductor package

Abstract

A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

1 . A method for manufacturing a semiconductor structure, comprising:
 providing a silicon substrate;   removing a part of the silicon substrate to form a ring hole and a silicon pillar surrounded by the ring hole;   disposing a photosensitive material in the ring hole, wherein the photosensitive material is insulating;   removing the silicon pillar, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole; and   disposing a conductive material in the through hole, wherein the conductive material is surrounded by the photosensitive material.   
     
     
         2 . The manufacturing method according to  claim 1 , wherein the part of the silicon substrate is removed by etching. 
     
     
         3 . The manufacturing method according to  claim 1 , wherein before the step of forming the ring hole, the manufacturing method further comprises:
 forming a first conductive wiring on a first surface of the silicon substrate, wherein the first conductive wiring is disposed at a pre-determined position corresponding the ring hole.   
     
     
         4 . The manufacturing method according to  claim 3 , wherein the step of disposing the photosensitive material in the ring hole comprises:
 disposing the photosensitive material on a second surface of the silicon substrate, wherein the photosensitive material covers the ring hole;   melting the photosensitive material, such that part of the melted photosensitive material fills in the ring hole; and   ripening the photosensitive material which has been melted and filled in the ring hole.   
     
     
         5 . The manufacturing method according to  claim 1 , wherein the step of removing the silicon pillar comprises:
 patterning the photosensitive material, such that the photosensitive material forms an opening corresponding to the silicon pillar; and   using the patterned photosensitive material as a mask and etching the silicon pillar to remove the silicon pillar.   
     
     
         6 . The manufacturing method according to  claim 5 , wherein the ring hole has an inner lateral wall and an outer lateral wall and in the step of patterning the photosensitive material, and the diameter of the opening is greater than or equal to the diameter of the inner lateral wall but smaller than the diameter of the outer lateral wall. 
     
     
         7 . The manufacturing method according to  claim 1 , wherein the step of disposing the conductive material in the through hole comprises:
 electroplating a metal in the through hole.   
     
     
         8 . The manufacturing method according to  claim 1 , wherein the step of disposing the conductive material in the through hole comprises:
 filling a solder paste in the through hole; and   reflowing the solder paste.   
     
     
         9 . The manufacturing method according to  claim 1 , further comprising:
 forming a second conductive wiring on a second surface of the silicon substrate, the second conductive wiring electrically connects the conductive material in the through hole.   
     
     
         10 . The manufacturing method according to  claim 9 , further comprising:
 forming a bump on the second conductive wiring.   
     
     
         11 . A semiconductor structure, comprising:
 a silicon substrate having a through hole;   a photosensitive material disposed on a lateral wall of the through hole, wherein the photosensitive material is insulating; and   a conductive material disposed in the through hole and an outer surface of the conductive material is surrounded by the photosensitive material.   
     
     
         12 . The semiconductor structure according to  claim 11 , further comprising:
 a first conductive wiring formed on a first surface of the silicon substrate, wherein the first conductive wiring connects one end of the through hole; and   a conductive bump disposed on a second surface of the silicon substrate, wherein the conductive bump connects the other end of the through hole;   wherein the first conductive wiring, the conductive material and the conductive bump are electrically connected.   
     
     
         13 . The semiconductor structure according to  claim 11 , further comprising:
 a second conductive wiring formed on the second surface of the silicon substrate;   wherein the conductive bump is disposed on the second conductive wiring.   
     
     
         14 . The semiconductor structure according to  claim 11 , wherein the outer surface of the conductive material is completely covered by the photosensitive material. 
     
     
         15 . The semiconductor structure according to  claim 11 , wherein the photosensitive material is further disposed on a second surface of the silicon substrate. 
     
     
         16 . The semiconductor structure according to  claim 11 , wherein the thickness of the photosensitive material is 3-10 μm. 
     
     
         17 . A semiconductor package, comprising:
 a package substrate;   a silicon interposer disposed above the package substrate, comprising:
 a silicon substrate having a through hole; 
 a photosensitive material disposed on a lateral wall of the through hole, wherein the photosensitive material is insulating; and 
 a conductive material disposed in the through hole and an outer surface of the conductive material is surrounded by the photosensitive material; and 
   a chip disposed above the silicon interposer.   
     
     
         18 . The semiconductor package according to  claim 17 , wherein the silicon interposer further comprises:
 a first conductive wiring formed on a first surface of the silicon substrate, wherein the first conductive wiring connects one end of the through hole; and   a conductive bump disposed on a second surface of the silicon substrate, wherein the conductive bump connects the other end of the through hole;   wherein the first conductive wiring, the conductive material and the conductive bump are electrically connected.   
     
     
         19 . The semiconductor package according to  claim 17 , wherein the silicon interposer further comprises:
 a second conductive wiring formed on the second surface of the silicon substrate;   wherein the conductive bump is disposed on the second conductive wiring.   
     
     
         20 . The semiconductor package according to  claim 17 , wherein the outer surface of the conductive material is completely covered by the photosensitive material. 
     
     
         21 . The semiconductor package according to  claim 17 , wherein the photosensitive material is further disposed on a second surface of the silicon substrate. 
     
     
         22 . The semiconductor package according to  claim 17 , wherein the thickness of the photosensitive material is 3-10 μm.