Superhard dielectric compounds and methods of preparation

Abstract

Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H 3 X—O—XH 3 , wherein X is silicon or carbon with a compound comprising boron or nitrogen In a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.

1 . A compound of the formula XqYpZtO wherein X is selected from the group consisting of silicon or carbon, Y is selected from the group consisting of boron or nitrogen, Z is selected from the group consisting of gallium or aluminum, O is oxygen, wherein q and p are independently 1, 2 or 3 and t is zero or 1, provided that when X is silicon, and t is zero, Y is not nitrogen. 
   
   
       2 . (canceled) 
   
   
       3 - 5 . (canceled) 
   
   
       6 . The compound of  claim 1  wherein X is Si and Y is boron. 
   
   
       7 . The compound of  claim 6  having the formula Si 2 B 2 O. 
   
   
       8 . (canceled) 
   
   
       9 . The compound of  claim 1  wherein X is silicon and Y is nitrogen. 
   
   
       10 . The compound of  claim 1  wherein X is carbon and Y is boron. 
   
   
       11 . The compound of  claim 10  having the formula C 2 B 2 O. 
   
   
       12 - 64 . (canceled) 
   
   
       65 . The compound of  claim 1  wherein at least one of p and q are 1 or 2. 
   
   
       66 . The compound of  claim 1  wherein Z is aluminum. 
   
   
       67 . The compound of  claim 1  wherein t is 0. 
   
   
       68 . The compound of  claim 6  having the formula SiB 2 O. 
   
   
       69 . The compound of  claim 1  wherein X is silicon, Y is nitrogen, and Z is aluminum. 
   
   
       70 . The compound of  claim 69  having the formula Si 2 N 3 AlO.