Inventor · disambiguated record
John Tolle
Also filed as: TOLLE JOHN
51 granted patents·20 pending applications·7,156 citations·filing 2001–2025
99Inventor score
Files withASM IP HOLDING BV44APPLIED MATERIALS INC13UNIV ARIZONA4UNIV ARIZONA STATE3KOUVETAKIS JOHN2
Top patents by PatentIndex Score
71 records- 0199US9793115B2Structures and devices including germanium-tin films and methods of forming sameASM IP HOLDING BV·Filed 2016·Granted Oct 17, 2017·464 cites·20 claims
- 0299US9396934B2Methods of forming films including germanium tin and structures and devices including the filmsASM IP HOLDING BV·Filed 2013·Granted Jul 19, 2016·494 cites·20 claims
- 0398US10053774B2Reactor system for sublimation of pre-clean byproducts and method thereofASM IP HOLDING BV·Filed 2015·Granted Aug 21, 2018·444 cites·8 claims
- 0498US9905420B2Methods of forming silicon germanium tin films and structures and devices including the filmsASM IP HOLDING BV·Filed 2015·Granted Feb 27, 2018·466 cites·20 claims
- 0598US9647114B2Methods of forming highly p-type doped germanium tin films and structures and devices including the filmsASM IP HOLDING BV·Filed 2015·Granted May 9, 2017·478 cites·11 claims
- 0698US9514927B2Plasma pre-clean module and processASM IP HOLDING BV·Filed 2016·Granted Dec 6, 2016·467 cites·22 claims
- 0798US9474163B2Germanium oxide pre-clean module and processASM IP HOLDING BV·Filed 2014·Granted Oct 18, 2016·411 cites·34 claims
- 0898US9299557B2Plasma pre-clean module and processASM IP HOLDING BV·Filed 2014·Granted Mar 29, 2016·472 cites·39 claims
- 0998US9099423B2Doped semiconductor films and processingASM IP HOLDING BV·Filed 2013·Granted Aug 4, 2015·414 cites·28 claims
- 1097US9890456B2Method and system for in situ formation of gas-phase compoundsASM IP HOLDING BV·Filed 2014·Granted Feb 13, 2018·466 cites·14 claims
- 1197US7598513B2SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and SnUNIV ARIZONA STATE·Filed 2004·Granted Oct 6, 2009·524 cites·26 claims
- 1296US10262859B2Process for forming a film on a substrate using multi-port injection assembliesASM IP HOLDING BV·Filed 2018·Granted Apr 16, 2019·413 cites·14 claims
- 1396US9892913B2Radial and thickness control via biased multi-port injection settingsASM IP HOLDING BV·Filed 2017·Granted Feb 13, 2018·464 cites·17 claims
- 1496US7589003B2GeSn alloys and ordered phases with direct tunable bandgaps grown directly on siliconUNIV ARIZONA STATE·Filed 2004·Granted Sep 15, 2009·549 cites·22 claims
- 1594US7238596B2Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogsARIZONA BOARD OF REGENTA A BOD·Filed 2004·Granted Jul 3, 2007·544 cites·25 claims
- 1693US11168395B2Temperature-controlled flange and reactor system including sameASM IP HOLDING BV·Filed 2020·Granted Nov 9, 2021·3 cites·17 claims
- 1791US11814747B2Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assemblyASM IP HOLDING BV·Filed 2020·Granted Nov 14, 2023·3 cites·20 claims
- 1889US11901179B2Method and device for depositing silicon onto substratesASM IP HOLDING BV·Filed 2021·Granted Feb 13, 2024·1 cites·19 claims
- 1988US10612136B2Temperature-controlled flange and reactor system including sameASM IP HOLDING BV·Filed 2018·Granted Apr 7, 2020·3 cites·21 claims
- 2085US10446393B2Methods for forming silicon-containing epitaxial layers and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Oct 15, 2019·4 cites·20 claims
- 2183US10787741B2Method and system for in situ formation of gas-phase compoundsASM IP HOLDING BV·Filed 2018·Granted Sep 29, 2020·1 cites·10 claims
- 2282US11557474B2Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporationASM IP HOLDING BV·Filed 2020·Granted Jan 17, 2023·1 cites·14 claims
- 2382US10373850B2Pre-clean chamber and process with substrate tray for changing substrate temperatureASM IP HOLDING BV·Filed 2015·Granted Aug 6, 2019·3 cites·23 claims
- 2481US10519541B2Reactor system for sublimation of pre-clean byproducts and method thereofASM IP HOLDING BV·Filed 2018·Granted Dec 31, 2019·2 cites·13 claims
- 2581US8821635B2Method for growing Si-Ge semiconductor materials and devices on substratesKOUVETAKIS JOHN·Filed 2005·Granted Sep 2, 2014·9 cites·39 claims
- 2680US11374112B2Method for depositing a group IV semiconductor and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Jun 28, 2022·2 cites·17 claims
- 2780US11053585B2Reactor system for sublimation of pre-clean byproducts and method thereofASM IP HOLDING BV·Filed 2019·Granted Jul 6, 2021·0 cites·19 claims
- 2880US10541333B2Method for depositing a group IV semiconductor and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Jan 21, 2020·2 cites·15 claims
- 2979US7582891B2Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered siliconARIZONA BOARD OF REGENTS A COR·Filed 2005·Granted Sep 1, 2009·9 cites·5 claims
- 3077US12195876B2Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assemblyASM IP HOLDING BV·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 3176US6911084B2Low temperature epitaxial growth of quaternary wide bandgap semiconductorsUNIV ARIZONA·Filed 2001·Granted Jun 28, 2005·20 cites·19 claims
- 3276US2025092566A1Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assemblyASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3375US7781356B2Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layerUNIV ARIZONA·Filed 2004·Granted Aug 24, 2010·17 cites·45 claims
- 3473US2024079231A1Method and device for depositing silicon onto substratesASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3573US2025273464A1Method for depositing boron and gallium containing silicon germanium layersASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3672US12363960B2Method for depositing a Group IV semiconductor and related semiconductor device structuresASM IP HOLDING BV·Filed 2022·Granted Jul 15, 2025·0 cites·17 claims
- 3770US2025361647A1Uv energy sources for processing chambers, and related apparatus and methodsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3868US2023145240A1Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporationASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 3967US2025354291A1Inhibitors for selective epitaxial depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4066US12262559B2Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 4165US8921207B2Tin precursors for vapor deposition and deposition processesASM INC·Filed 2013·Granted Dec 30, 2014·1 cites·20 claims
- 4265US2025194243A1Monolithic complementary field-effect transistors having carbon-doped release layersAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 4363US2024321605A1Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatusASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 4463US2022367175A1Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamberASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 4562US12428731B2Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustabilityAPPLIED MATERIALS INC·Filed 2022·Granted Sep 30, 2025·0 cites·22 claims
- 4662US12406846B2Method for depositing boron and gallium containing silicon germanium layersASM IP HOLDING BV·Filed 2021·Granted Sep 2, 2025·0 cites·17 claims
- 4760US12512362B2Susceptor improvementAPPLIED MATERIALS INC·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 4859US11764058B2Three-color 3D DRAM stack and methods of makingAPPLIED MATERIALS INC·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 4959US11004977B2Method for depositing a group IV semiconductor and related semiconductor device structuresASM IP HOLDING BV·Filed 2019·Granted May 11, 2021·0 cites·14 claims
- 5059US2024145241A1Surface modifiers for enhanced epitaxial nucleation and wettingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →