Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation

Abstract

A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

1 . An apparatus for forming a device, comprising:
 a reaction chamber;   a first gas source configured to provide a first gas to the reaction chamber;   a second gas source configured to provide a second gas to the reaction chamber;   a susceptor configured to hold a semiconductor substrate; and   a controller configured to perform operations, including:
 cleaning a device on the semiconductor substrate of any oxides, the semiconductor substrate being disposed on the susceptor in the reaction chamber; 
 stabilizing a temperature of the reaction chamber; 
 flowing a halide precursor onto the device, the halide precursor comprising at least one of: hydrogen fluoride (HF); hydrogen chloride (HCl); hydrogen bromide (HBr); hydrogen iodide (HI); chlorine (Cl 2 ); fluorine (F 2 ); bromine (Br 2 ); or iodine (I 2 ); 
 flowing a silicon precursor onto the device, the silicon precursor comprising at least one of: silane (SiH 4 ); dichlorosilane (DCS); disilane; or trisilane; and 
 flowing a dopant precursor onto the device, the dopant precursor comprising at least one of: PCl 3 ; PCl 5 ; PBr 3 ; PBr 5 ; PI 3 ; PI 5 ; AsCl 3 ; AsCl 5 ; AsBr 3 ; AsBr 5 ; AsI 3 ; AsI 5 ; SbCl 3 ; SbCl 5 ; SbBr 3 ; SbBr 5 ; SbI 3 ; SbI 5 ; arsine (AsH 3 ); or phosphine (PH 3 ); 
 wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate; 
 wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP); silicon arsenide (SiAs); silicon antimonide (SiSb), or combinations thereof; and 
 wherein any of the flowing operations are repeated to form a desired thickness of the contact layer. 
   
     
     
         2 . The apparatus of  claim 1 , further configured to perform the cleaning operation at a temperature between 500° C. and 800° C. 
     
     
         3 . The apparatus of  claim 2 , wherein the temperature of the cleaning operation is between 550° C. and 700° C. 
     
     
         4 . The apparatus of  claim 3 , wherein the temperature of the cleaning operation is between 600° C. and 650° C. 
     
     
         5 . The apparatus of  claim 1 , further configured to perform the stabilizing operation by stabilizing the temperature to a temperature ranging 400° C. and 800° C. 
     
     
         6 . The apparatus of  claim 1 , wherein the reaction chamber is configured to have a pressure that ranges between 10 and 200 Torr. 
     
     
         7 . The apparatus of  claim 6 , wherein the reaction chamber is configured to have a pressure that ranges between 30 and 100 Torr. 
     
     
         8 . The apparatus of  claim 1 , wherein the contact layer formed has a crystallographic orientation of ( 111 ). 
     
     
         9 . The apparatus of  claim 1 , further configured to perform the cleaning operation by providing a remote plasma. 
     
     
         10 . The apparatus of  claim 1 , wherein the cleaning operation further comprises providing a remote plasma. 
     
     
         11 . The apparatus of  claim 1 , wherein the dielectric layer comprises silicon oxide, silicon oxynitride, silicon oxycarbon, or combinations thereof. 
     
     
         12 . The apparatus of  claim 1 , wherein the dopant precursor comprises at least one of PCl 3 , PCl 5 , PBr 3 , PBr 5 , PI 3 , PI 5 ; and wherein the contact layer comprises silicon phosphine (SiP). 
     
     
         13 . The apparatus of  claim 1 , wherein the dopant precursor comprises at least one of AsCl 3 , AsCl 5 , AsBr 3 , AsBr 5 , AsI 3 , AsI 5 ; and wherein the contact layer comprises silicon arsenide (SiAs). 
     
     
         14 . The apparatus of  claim 1 , wherein the dopant precursor comprises at least one of SbCl 3 , SbCl 5 , SbBr 3 , SbBr 5 , SbI 3 , SbI 5 ; and wherein the contact layer comprises silicon antimonide (SiSb). 
     
     
         15 . An apparatus for forming a device, comprising:
 a reaction chamber;   a first gas source configured to provide a first gas to the reaction chamber;   a second gas source configured to provide a second gas to the reaction chamber;   a susceptor configured to hold a semiconductor substrate; and   a controller configured to perform operations, including:
 cleaning a device on the semiconductor substrate of any oxides, the semiconductor substrate being disposed on the susceptor in the reaction chamber; 
 stabilizing a temperature of the reaction chamber; 
 flowing a halide precursor onto the device, the halide precursor comprising at least one of: hydrogen fluoride (HF); hydrogen chloride (HCl); hydrogen bromide (HBr); 
 hydrogen iodide (HI); chlorine (Cl 2 ); fluorine (F 2 ); bromine (Br 2 ); or iodine (I 2 ); 
 flowing a silicon precursor onto the device, the silicon precursor comprising at least one of: silane (SiH 4 ); dichlorosilane (DCS); disilane; or trisilane; and 
 flowing a dopant precursor onto the device, the dopant precursor comprising at least one of: PCl 3 ; PCl 5 ; PBr 3 ; PBr 5 ; PI 3 ; PI 5 ; AsCl 3 ; AsCl 5 ; AsBr 3 ; AsBr 5 ; AsI 3 ; AsI 5 ; SbCl 3 ; SbCl 5 ; SbBr 3 ; SbBr 5 ; SbI 3 ; SbI 5 ; arsine (AsH 3 ); or phosphine (PH 3 ); 
 wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate; 
 wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP); silicon arsenide (SiAs); silicon antimonide (SiSb), or combinations thereof. 
   
     
     
         16 . The apparatus of  claim 15 , further configured to perform the cleaning step at a temperature between 500° C. and 800° C. 
     
     
         17 . The apparatus of  claim 15 , wherein the reaction chamber is configured to have a pressure that ranges between 10 and 200 Torr. 
     
     
         18 . An apparatus for forming a device, comprising:
 a reaction chamber;   a first gas source configured to provide a first gas to the reaction chamber;   a second gas source configured to provide a second gas to the reaction chamber;   a susceptor configured to hold a semiconductor substrate on which a device is formed; and   a controller configured to perform operations, including:
 flowing a halide precursor onto the device, the halide precursor comprising at least one of: hydrogen fluoride (HF); hydrogen chloride (HCl); hydrogen bromide (HBr); hydrogen iodide (HI); chlorine (Cl 2 ); fluorine (F 2 ); bromine (Br 2 ); or iodine (I 2 ); 
 flowing a silicon precursor onto the device, the silicon precursor comprising at least one of: silane (SiH 4 ); dichlorosilane (DCS); disilane; or trisilane; and 
 flowing a dopant precursor onto the device, the dopant precursor comprising at least one of: PCl 3 ; PCl 5 ; PBr 3 ; PBr 5 ; PI 3 ; PI 5 ; AsCl 3 ; AsCl 5 ; AsBr 3 ; AsBr 5 ; AsI 3 ; AsI 5 ; SbCl 3 ; SbCl 5 ; SbBr 3 ; SbBr 5 ; SbI 3 ; SbI 5 ; arsine (AsH 3 ); or phosphine (PH 3 ); 
 wherein the halide precursor prevents deposition onto a dielectric layer disposed on the semiconductor substrate; 
 wherein the silicon precursor and the dopant precursor react to form a contact layer, wherein the contact layer comprises silicon phosphine (SiP); silicon arsenide (SiAs); silicon antimonide (SiSb), or combinations thereof. 
   
     
     
         19 . The apparatus of  claim 18 , wherein the dielectric layer comprises silicon oxide, silicon oxynitride, silicon oxycarbon, or combinations thereof. 
     
     
         20 . The apparatus of  claim 18 , further configured for one of:
 the dopant precursor comprising at least one of PCl 3 , PCl 5 , PBr 3 , PBr 5 , PI 3 , and PI 5 ; and   the contact layer comprising silicon phosphine (SiP); or the dopant precursor comprising at least one of AsCl 3 , AsCl 5 , AsBr 3 , AsBr 5 , AsI 3 , and AsI 5 ; and the contact layer comprising silicon arsenide (SiAs).