Process for chemical vapor deposition of materials with via filling capability and structure formed thereby

Abstract

A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.

1 . A semiconductor structure comprising a material including at least one opening located therein, said at least one opening having an aspect ratio of greater than 3:1, wherein said at least one opening is filled with a chemical vapor deposited material comprising Ge and Sb. 
   
   
       2 . The semiconductor structure of  claim 1  wherein said material is a dielectric material. 
   
   
       3 . The semiconductor structure of  claim 1  wherein said chemical vapor deposited material comprising Ge and Sb has the formula Ge x Sb y  wherein x is from about 2 to about 98 atomic % Ge, and y is from about 98 to about 2 atomic percent Sb. 
   
   
       4 . The semiconductor structure of  claim 1  wherein said material is a non-insulating material selected from the group consisting of semiconductor materials and conductive materials.