Inventor · disambiguated record
John J. Yurkas
Also filed as: YURKAS JOHN J · YURKAS JOHN JACOB
20 granted patents·9 pending applications·508 citations·filing 1996–2017
95Inventor score
Top patents by PatentIndex Score
29 records- 0192US6107199AMethod for improving the morphology of refractory metal thin filmsIBM·Filed 1998·Granted Aug 22, 2000·267 cites·14 claims
- 0289US8242030B2Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidationHANNON JAMES B·Filed 2009·Granted Aug 14, 2012·20 cites·19 claims
- 0384US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 0479US5789312AMethod of fabricating mid-gap metal gates compatible with ultra-thin dielectricsIBM·Filed 1996·Granted Aug 4, 1998·49 cites·22 claims
- 0578US10748059B2Architecture for an electrochemical artificial neural networkIBM·Filed 2017·Granted Aug 18, 2020·3 cites·11 claims
- 0678US7067422B2Method of forming a tantalum-containing gate electrode structureIBM·Filed 2004·Granted Jun 27, 2006·23 cites·31 claims
- 0774US6756651B2CMOS-compatible metal-semiconductor-metal photodetectorIBM·Filed 2001·Granted Jun 29, 2004·18 cites·25 claims
- 0873US6452276B1Ultra thin, single phase, diffusion barrier for metal conductorsIBM·Filed 1998·Granted Sep 17, 2002·38 cites·22 claims
- 0964US7863083B2High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2008·Granted Jan 4, 2011·1 cites·18 claims
- 1063US6770500B2Process of passivating a metal-gated complementary metal oxide semiconductorIBM·Filed 2002·Granted Aug 3, 2004·10 cites·20 claims
- 1160US6091122AFabrication of mid-cap metal gates compatible with ultra-thin dielectricsIBM·Filed 1998·Granted Jul 18, 2000·20 cites·14 claims
- 1260US2011052797A1Low Temperature Plasma-Free Method for the Nitridation of CopperIBM·Filed 2009·Application pending·0 cites
- 1358US6660330B2Method for depositing metal films onto substrate surfaces utilizing a chamfered ring supportIBM·Filed 2001·Granted Dec 9, 2003·6 cites·19 claims
- 1457US10141528B1Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistorsIBM·Filed 2017·Granted Nov 27, 2018·0 cites·9 claims
- 1557US10141529B1Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistorsIBM·Filed 2017·Granted Nov 27, 2018·0 cites·14 claims
- 1656US2010009164A1Process for chemical vapor deposition of materials with via filling capability and structure formed therebyIBM·Filed 2009·Application pending·0 cites
- 1752US6238737B1Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed therebyIBM·Filed 1999·Granted May 29, 2001·14 cites·20 claims
- 1851US2009294876A1Method for deposition of an ultra-thin electropositive metal-containing cap layerIBM·Filed 2009·Application pending·0 cites
- 1948US6579614B2Structure having refractory metal film on a substrateIBM·Filed 2001·Granted Jun 17, 2003·1 cites·15 claims
- 2047US2009008725A1Method for deposition of an ultra-thin electropositive metal-containing cap layerIBM·Filed 2007·Application pending·0 cites
- 2145US2005221000A1Method of forming a metal layerIBM·Filed 2004·Application pending·0 cites
- 2242US2005250318A1CVD tantalum compounds for FET gate electrodesNARAYANAN VIJAY·Filed 2005·Application pending·0 cites
- 2340US2003098489A1High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2001·Application pending·0 cites
- 2439US7172968B2Ultra thin, single phase, diffusion barrier for metal conductorsIBM·Filed 2002·Granted Feb 6, 2007·0 cites·12 claims
- 2539US7037834B2Constant emissivity deposition memberIBM·Filed 2004·Granted May 2, 2006·0 cites·15 claims
- 2639US2005069641A1Method for depositing metal layers using sequential flow depositionTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2737US6211042B1Growth of epitaxial semiconductor films in presence of reactive metalIBM·Filed 1998·Granted Apr 3, 2001·6 cites·10 claims
- 2836US2005104142A1CVD tantalum compounds for FET get electrodesFiled 2003·Application pending·0 cites
- 2930US6017401AConductivity improvement in thin films of refractory metalIBM·Filed 1998·Granted Jan 25, 2000·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →