Method for an improved chemical mechanical polishing system

Abstract

A method for polishing a substrate on a pad large enough to accommodate polishing at least two substrates simultaneously The method includes simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module, providing polishing fluid from a first fluid delivery arm in front of the first substrate while the first substrate is pressed against the polishing surface, providing polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface, conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface, and conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface.

1 . A method for polishing a substrate on a pad, comprising:
 simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module;   providing a first polishing fluid from a first fluid delivery arm at a location in front of the first substrate while the first substrate is pressed against the polishing surface;   providing a second polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface;   conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface; and   conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface.   
   
   
       2 . The method of  claim 1 , further comprising using end point detection to determine a removal rate of a metal layer on at least one of the two substrates. 
   
   
       3 . The method of  claim 2 , wherein the metal layer is a copper layer. 
   
   
       4 . The method of  claim 1 , wherein a polishing rate is from about 3000 Å/min to about 12000 Å/min. 
   
   
       5 . The method of  claim 2 , wherein the end point detection includes eddy current endpoint detection or In Situ Removal Monitor (ISRM) laser endpoint detection. 
   
   
       6 . The method of  claim 1 , further comprising conditioning a region of the polishing pad, where a previously polished substrate was located, with additional polishing fluid before the region contacts a next substrate. 
   
   
       7 . The method of  claim 6 , wherein the conditioner has a sweeping frequency within a range from about 12 swp/min to about 25 swp/min. 
   
   
       8 . The method of  claim 6 , wherein the conditioner has a rotation rate within a range from about 80 rpm to about 150 rpm. 
   
   
       9 . The method of  claim 6 , wherein slurry agent is used as additional polishing fluid. 
   
   
       10 . The method of  claim 9 , wherein the slurry agent is silica. 
   
   
       11 . The method of  claim 9 , wherein the slurry usage rate per slurry delivery arm has a rotation rate within a range from about 300 sccm to about 600 sccm, 
   
   
       12 . The method of  claim 9 , wherein the slurry delivery arm sweeps the polishing surface with a frequency rate within a range from about 10 swp/min to about 60 swp/min. 
   
   
       13 . The method of  claim 9 , wherein the slurry delivery arm has a range within about 7 inches to about 13 inches.