Consistant and quantitative method for tco delamination evaluation
Abstract
A method and apparatus for manufacturing photovoltaic cells is provided. In one embodiment, a method for evaluating transparent conductive oxide (TCO) delamination from a substrate is provided. The method comprises providing a glass substrate with a TCO film laminated on a first surface of the glass substrate, depositing a metal layer on a second surface of the glass substrate opposite the first surface, heating the substrate while applying a bias to the substrate, cooling the substrate in a humidity controlled environment for a fixed time period, dividing the TCO film into a plurality of electrically insulated channels using a laser scribing process, and measuring a resistance of each of the plurality of electrically insulated channels.
Claims
exact text as granted — not AI-modified1 . A method of evaluating a transparent conductive oxide (TCO) delamination from a substrate, comprising:
providing a glass substrate comprising:
a TCO film laminated on a first surface of the glass substrate; and
a metal layer deposited on a second surface of the glass substrate;
heating the substrate while applying a bias to the substrate; exposing the heated substrate to a humidity controlled environment for a fixed time period; dividing the TCO film into a plurality of electrically insulated channels; and measuring a resistance of each of the plurality of electrically insulated channels.
2 . The method of claim 1 , further comprising:
comparing the resistance of each of the plurality of electrically insulated channels with a desired delamination resistance to determine which of the plurality of electrically insulated channels have suffered delamination and which of the plurality of electrically insulated channels are still functional.
3 . The method of claim 2 , further comprising:
evaluating the TCO delamination from the substrate by comparing a number of electrically insulated channels that have suffered delamination with a number of electrically insulated channels that are functional.
4 . The method of claim 1 , wherein the TCO film comprises material selected from the group comprising tin oxide (SnO), zinc oxide (ZnO), and aluminum doped zinc oxide (AZO).
5 . The method of claim 1 , wherein heating the substrate comprises exposing the metal layer deposited on the second surface of the glass substrate to a heat source.
6 . The method of claim 5 , wherein applying a bias to the substrate comprises applying a positive bias to the metal layer and a negative bias to the TCO film.
7 . The method of claim 5 , wherein the heat source is positioned in an enclosed temperature controlled chamber.
8 . The method of claim 1 , wherein the metal layer is an aluminum layer.
9 . The method of claim 1 , wherein the fixed time period is selected to cool the substrate to room temperature.
10 . A method for evaluating transparent conductive oxide (TCO) delamination from a substrate, comprising:
providing a glass substrate with a TCO film laminated on a first surface of the glass substrate; depositing a metal layer on a second surface of the glass substrate opposite the first surface; heating the substrate while applying a bias to the substrate; cooling the substrate in a humidity controlled environment for a fixed time period; dividing the TCO film into a plurality of electrically insulated channels using a laser scribing process; measuring a resistance of each of the plurality of electrically insulated channels.
11 . The method of claim 10 , wherein the TCO film comprises material selected from the group comprising tin oxide (SnO), zinc oxide (ZnO), and aluminum doped zinc oxide (AZO).
12 . The method of claim 10 , wherein the metal layer is an aluminum layer.
13 . The method of claim 12 , wherein the metal layer has a thickness between about 1,000 Å and about 5,000 Å.
14 . The method of claim 10 , wherein heating the substrate comprises exposing the metal layer deposited on the second surface of the glass substrate to a heat source.
15 . The method of claim 14 , wherein applying a bias to the substrate comprises applying a bias between the metal layer and the TCO film.
16 . The method of claim 10 , wherein the humidity controlled environment is maintained at a relative humidity (RH) between about 60% and about 100%.
17 . The method of claim 16 , wherein heating the substrate comprises heating the substrate in a temperature controlled environment to a temperature of about 250° C.
18 . The method of claim 15 , wherein the bias is between about 100 volts to about 250 volts.
19 . The method of claim 18 , wherein the fixed time period is selected to cool the substrate to room temperature.
20 . The method of claim 10 , wherein cooling the substrate in a humidity controlled environment for a fixed time period comprises positioning the substrate in an enclosed chamber with a controlled relative humidity.Cited by (0)
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