Lithographic machine platform and applications thereof

Abstract

A lithographic machine platform and applications thereof is disclosed. The lithographic machine platform comprises: an electron beam or an ion beam generator generating an electron beam or an ion beam; a substrate supporting platform supporting a substrate; and a precursory gas injector injecting a precursory gas above the substrate. The present invention uses the electron beam or the ion beam to induce the precursory gas to react with the electron beam or the ion beam, and then the precursory gas is deposited on the substrate. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.

1 . A lithographic machine platform comprising:
 an electron beam or an ion beam generator generating an electron beam or an ion beam;   a substrate supporting platform supporting a semiconductor substrate; and   a precursory gas injector injecting a precursory gas on a surface of said substrate, and said precursory gas is reacted with said electron beam or said ion beam to form a patterned layer deposited on said surface of said substrate.   
     
     
         2 . The lithographic machine platform according to  claim 1 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         3 . The lithographic machine platform according to  claim 1 , wherein said precursory gas is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer. 
     
     
         4 . The lithographic machine platform according to  claim 1 , wherein said patterned layer is a metal layer or a dielectric layer. 
     
     
         5 . The lithographic machine platform according to  claim 1 , wherein said patterned layer is a metal layer comprising platinum, wolfram, titanium, or tantalum. 
     
     
         6 . The lithographic machine platform according to  claim 1 , wherein said patterned layer comprises silicon dioxide, silicon nitride, or silicon carbide. 
     
     
         7 . The lithographic machine platform according to  claim 1 , wherein said patterned layer is used as a hard mask layer. 
     
     
         8 . A patterned layer fabricated with the lithographic machine platform described in  claim 1  is located on a substrate, and a precursory gas reacted with an electron beam or an ion beam is deposited to form said patterned layer. 
     
     
         9 . The patterned layer according to  claim 8 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         10 . The patterned layer according to  claim 8 , wherein said patterned layer is used as a hard mask layer. 
     
     
         11 . A method for fabricating a patterned layer comprising steps of:
 providing a semiconductor substrate;   forming a precursory gas on said semiconductor substrate; and   depositing to form a patterned layer on said semiconductor substrate by reacting said precursory gas with an electron beam or an ion beam.   
     
     
         12 . The method for fabricating a patterned layer according to  claim 11 , wherein said precursory gas is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer. 
     
     
         13 . The method for fabricating a patterned layer according to  claim 11 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         14 . The method for fabricating a patterned layer according to  claim 11 , wherein said patterned layer is used as a hard mask layer. 
     
     
         15 . A lithographic machine platform comprising:
 an electron beam or an ion beam generator generating an electron beam or an ion beam; and   a substrate supporting platform supporting a semiconductor substrate, and a surface of said semiconductor substrate is provided with a precursory layer to react with said electron beam or said ion beam.   
     
     
         16 . The lithographic machine platform according to  claim 15 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         17 . The lithographic machine platform according to  claim 15 , wherein precursory layer comprises metallic materials or dielectric materials. 
     
     
         18 . The lithographic machine platform according to  claim 15 , wherein said lithographic machine platform is applied to fabricate a hard mask layer. 
     
     
         19 . A patterned layer fabricated with the lithographic machine platform described in  claim 15  is located on a substrate, and a precursory layer reacted with an electron beam or an ion beam is etched selectively to form said patterned layer. 
     
     
         20 . The patterned layer according to  claim 19 , wherein said precursory layer comprises metallic materials or dielectric materials. 
     
     
         21 . The patterned layer according to  claim 19 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         22 . The patterned layer according to  claim 19 , wherein said patterned layer is used as a hard mask layer. 
     
     
         23 . A method for fabricating a patterned layer comprising steps:
 providing a semiconductor substrate;   forming a precursory layer on said semiconductor substrate; and   reacting a part of said precursory layer with an electron beam or an ion beam to vary properties of said precursory layer; and   etching said precursory layer selectively to form a patterned layer.   
     
     
         24 . The method for fabricating a patterned layer according to  claim 23 , wherein said precursory layer comprises metallic materials or dielectric materials. 
     
     
         25 . The method for fabricating a patterned layer according to  claim 23 , wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. 
     
     
         26 . The method for fabricating a patterned layer according to  claim 23 , wherein said patterned layer is used as a hard mask layer.