Method for forming patterned modified metal layer

Abstract

A method for forming a patterned modified metal layer is disclosed, which comprises the following steps: (A) providing a metal base which is in the form of either a bulk metal or a metal coated substrate, and a mold with patterns; (B) applying the mold onto the metal base to transfer the patterns of the mold to the metal surface; (C) removing the mold; and (D) modifying the whole metal base or the, surface and a certain depth beneath the surface of metal base to form a modified metal layer with designated patterns.

1 . A method for forming a patterned modified metal layer, comprising the following steps:
 (A) providing a metal base, and a mode with patterns;   (B) applying the mold onto the metal base to transfer the patterns of the mold to a surface of the metal base;   (C) removing the mold; and   (D) modifying the metal base to form a modified metal layer with the patterns.   
     
     
         2 . The method as claimed in  claim 1 , wherein the whole metal base, or the surface of the metal base is modified in the step (D). 
     
     
         3 . The method as claimed in  claim 1 , wherein the metal base is a with bulk metal, or a substrate with a metal layer formed thereon. 
     
     
         4 . The method as claimed in  claim 3 , wherein the material of the bulk metal and the metal layer is soft metals. 
     
     
         5 . The method as claimed in  claim 4 , wherein the soft metal is selected from the group consisting of Al, Ti, Zn, Cu, Ag, Ni, Au, and Pt. 
     
     
         6 . The method as claimed in  claim 1 , wherein the modified metal layer is a metal oxide layer. 
     
     
         7 . The method as claimed in  claim 6 , wherein the metal oxide layer is an Al 2 O 3  layer, a TiO 2  layer, or a ZnO layer. 
     
     
         8 . The method as claimed in  claim 1 , wherein the modified metal layer is a metal nitride layer. 
     
     
         9 . The method as claimed in  claim 8 , wherein the metal nitride layer is TiN. 
     
     
         10 . The method as claimed in  claim 1 , wherein the metal layer is modified under an atmosphere of inert gas in the step (D). 
     
     
         11 . The method as claimed in  claim 1 , wherein the metal layer is modified under vacuum in the step (D). 
     
     
         12 . The method as claimed in  claim 3 , wherein the substrate is a silicon substrate, a glass substrate, or a quartz substrate. 
     
     
         13 . The method as claimed in  claim 1 , wherein the metal base is modified through heat treatment, laser treatment, pulse laser treatment, plasma treatment, or rapid thermal annealing in the step (D). 
     
     
         14 . The method as claimed in  claim 13 , wherein the plasma treatment is oxygen-plasma treatment, or nitrogen-plasma treatment. 
     
     
         15 . The method as claimed in  claim 1 , wherein the thickness of the modified metal layer is 1 nm˜5 μm. 
     
     
         16 . The method as claimed in  claim 4 , wherein the thickness of the metal layer is 1 nm˜5 μm. 
     
     
         17 . The method as claimed in  claim 1 , wherein the modified metal layer comprises recesses. 
     
     
         18 . The method as claimed in  claim 17 , wherein the depth of the recesses is 1 nm˜3 μm. 
     
     
         19 . The method as claimed in  claim 17 , wherein the width of the recesses is 3 nm˜300 μm. 
     
     
         20 . The method as claimed in  claim 1 , wherein the surface of the metal base is a flat surface, or a curved surface.