Inventor · disambiguated record
Tai-Bor Wu
Also filed as: WU TAI-BOR
13 granted patents·5 pending applications·238 citations·filing 1996–2009
92Inventor score
Top patents by PatentIndex Score
18 records- 0193US7579612B2Resistive memory device having enhanced resist ratio and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 25, 2009·34 cites·14 claims
- 0286US7071007B2Method of forming a low voltage drive ferroelectric capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 4, 2006·42 cites·41 claims
- 0384US6927136B2Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereofMACRONIX INT CO LTD·Filed 2003·Granted Aug 9, 2005·38 cites·15 claims
- 0481US6559497B2Microelectronic capacitor with barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 6, 2003·31 cites·6 claims
- 0577US6640403B2Method for forming a dielectric-constant-enchanced capacitorVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Nov 4, 2003·21 cites·20 claims
- 0675US5667919AAttenuated phase shift mask and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·34 cites·18 claims
- 0763US2011011148A1Method for forming patterned modified metal layerNAT UNIV TSING HUA·Filed 2009·Application pending·0 cites
- 0861US9711373B2Method of fabricating a gate dielectric for high-k metal gate devicesCHANG CHE-HAO·Filed 2009·Granted Jul 18, 2017·2 cites·20 claims
- 0961US5973589AZno varistor of low-temperature sintering abilityNAT SCIENCE COUNCIL·Filed 1998·Granted Oct 26, 1999·19 cites·28 claims
- 1054US5714285AUsing (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masksTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 3, 1998·15 cites·14 claims
- 1148US7332760B2Ferroelectric material for ferroelectric devicesUNIV TSINGHUA·Filed 2005·Granted Feb 19, 2008·0 cites·28 claims
- 1248US2010093184A1Method for making a metal oxide layerUNIV TSINGHUA·Filed 2009·Application pending·0 cites
- 1347US7307304B2Ferroelectric materials and ferroelectric memory device made therefromUNIV TSINGHUA·Filed 2005·Granted Dec 11, 2007·0 cites·11 claims
- 1444US6456482B1Microelectronic capacitor with capacitor plate layer formed of tungsten rich tungsten oxide materialTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 24, 2002·2 cites·15 claims
- 1541US2006038214A1Low voltage drive ferroelectric capacitorTSENG YUAN-CHIEH·Filed 2005·Application pending·0 cites
- 1639US2007012977A1Semiconductor device and method for forming the sameWU TAI-BOR·Filed 2006·Application pending·0 cites
- 1737US2005263807A1Semiconductor device and method for forming a ferroelectric capacitor of the semiconductor deviceWU TAI-BOR·Filed 2005·Application pending·0 cites
- 1829US5981109AUsing (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 9, 1999·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →