US2011014115A1PendingUtilityA1

Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films

Assignee: LI JIUTAOPriority: Nov 14, 2003Filed: Jul 21, 2010Published: Jan 20, 2011
Est. expiryNov 14, 2023(expired)· nominal 20-yr term from priority
C23C 14/0623C23C 14/3492
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Claims

Abstract

Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm 2 , using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30° C.

Claims

exact text as granted — not AI-modified
1 - 84 . (canceled) 
     
     
         85 . A silver selenide film, comprising:
 deposited silver selenide, wherein said silver selenide comprises both alpha silver selenide and beta silver selenide.   
     
     
         86 . The silver selenide film of  claim 85 , wherein said deposited silver selenide primarily comprises alpha silver selenide.

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