Film deposition apparatus and film deposition method

Abstract

A film formation device ( 10 ) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device ( 10 ) includes an oxide film formation unit ( 14, 15, 16 ), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber ( 11 ), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film. A vapor deposition unit ( 17 ) vapor-deposits a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, on the oxide film. A polycondensation unit ( 20 ) polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate. The polycondensation unit supplies water to the oxide film before the vapor deposition unit vapor deposits the silane coupling agent on the oxide film.

1 . A film formation device including a vacuum chamber and a rotary mechanism, which rotates a substrate in the vacuum chamber, the film formation device comprising:
 an oxide film formation unit that forms an oxidized film on the substrate by releasing grains towards the rotated substrate and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film on the rotated substrate;   a vapor deposition unit that vaporizes a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, towards the rotated substrate, and vapor-deposits the silane coupling agent on the oxide film; and   a polycondensation unit that polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate;   wherein the polycondensation unit supplies the water to the oxide film before the vapor deposition unit vapor-deposits the silane coupling agent on the oxide film.   
     
     
         2 . The film formation device according to  claim 1 , wherein the polycondensation unit continues to supply the water towards the oxide film while the vapor deposition unit vapor-deposits the silane coupling agent on the oxide film. 
     
     
         3 . The film formation device according to  claim 1 , wherein the polycondensation unit is arranged upstream of the vapor deposition unit with respect to a rotating direction of the substrate. 
     
     
         4 . The film formation device according to any one of  claims 1  to  3 , wherein the oxide film formation unit forms a silicon film on the substrate by releasing silicon grains towards the rotated substrate and forms a silicon oxide film on the substrate by emitting the oxygen plasma towards the silicon film on the rotated substrate. 
     
     
         5 . A method for forming a thin film on a substrate rotated in a vacuum chamber, the method comprising:
 forming an oxidized film on the substrate by releasing grains towards the rotated substrate;   forming an oxide film on the substrate by emitting oxygen plasma towards the oxidized film on the rotated substrate; and   forming a liquid repellent film on the oxide film by supplying a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, and water towards the oxide film;   wherein said forming a liquid repellent film includes supplying the water to the oxide film before supplying the silane coupling agent to the oxide film.   
     
     
         6 . The method according to  claim 5 , wherein said forming a liquid repellent film further includes continuously supplying the water to the oxide film while vapor-depositing the silane coupling agent on the oxide film. 
     
     
         7 . The method according to  claim 5  or  6 , wherein said forming an oxidized film includes forming a silicon film on the substrate by releasing silicon grains towards the rotated substrate; and
 said forming an oxide film includes forming a silicon oxide film on the substrate by emitting the oxygen plasma towards the silicon film on the rotated substrate.