Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers

Abstract

A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

1 . A method for processing a microelectronic topography, comprising:
 forming a first metal layer upon the microelectronic topography;   converting at least a portion of the first metal layer to a hydrated metal oxide layer;   depositing a second metal layer upon the hydrated metal oxide layer; and   converting the hydrated metal oxide layer to a metal oxide layer subsequent to the step of deposition the second metal layer.   
     
     
         2 . The method of  claim 1 , wherein the step of converting at least a portion of the first metal layer comprises exposing the first metal layer to an oxidizing plasma. 
     
     
         3 . The method of  claim 1 , wherein the step of converting at least a portion of the first metal layer comprises exposing the first metal layer to an oxidizing fluid. 
     
     
         4 . The method of  claim 1 , wherein the step of converting at least a portion of the first metal layer comprises exposing the first metal layer to irradiating photons. 
     
     
         5 . The method of  claim 1 , wherein the first metal layer comprises tantalum and the hydrated metal oxide layer comprises tantalic acid. 
     
     
         6 . The method of  claim 1 , wherein the step of forming the first metal layer comprises forming a metal layer selected from a group consisting of tantalum, tantalum nitride, tantalum silicon nitride, tantalum carbon nitride, titanium, titanium nitride, titanium silicon nitride, tungsten and tungsten nitride. 
     
     
         7 . The method of  claim 1 , wherein the step of converting the hydrated metal oxide layer to a metal oxide layer comprises heating the microelectronic topography to a temperature greater than approximately 400° C. 
     
     
         8 . A method for processing a microelectronic topography, comprising:
 depositing a barrier layer upon the microelectronic topography;   hydrating at least a portion of the deposited barrier layer to form a metal oxide sub-layer;   depositing a first metal layer above the metal oxide sub-layer using an electroless deposition process; and   converting the metal oxide layer into a second metal layer subsequent to the step of depositing the first metal layer.   
     
     
         9 . The method of  claim 8 , wherein the barrier layer comprises a material selected from a group consisting of tantalum, tantalum nitride, tantalum silicon nitride, tantalum carbon nitride, titanium, titanium nitride, titanium silicon nitride, tungsten, tungsten nitride, silicon nitride, silicon carbide, silicon carbon nitride, silicon oxycarbide, and silicon oxycarbon nitride. 
     
     
         10 . The method of  claim 8 , wherein the first metal layer comprises copper. 
     
     
         11 . The method of  claim 8 , wherein the step of depositing the barrier layer comprises lining a trench of a microelectronic topography and wherein the step of electroless depositing the first metal layer comprises filling a substantial portion of the trench. 
     
     
         12 . The method of  claim 8 , further comprising depositing an activation seed layer upon the metal oxide sub-layer prior to the step of depositing the first metal layer. 
     
     
         13 . The method of  claim 8 , wherein the step of depositing the first metal layer comprises depositing the first metal layer directly upon and in contact with the metal oxide sub-layer. 
     
     
         14 . The method of  claim 8 , wherein the step of hydrating the metal oxide layer comprises annealing the microelectronic topography in an ambient comprising hydrogen. 
     
     
         15 . A microelectronic topography, comprising:
 a metal feature comprising a second metal layer formed upon and in contact with a first metal layer; and   a dielectric portion comprising a lower layer of hydrophilic material and an upper layer of hydrophobic material, wherein an upper surface of the lower layer is substantially coplanar with an upper surface of the first metal layer.   
     
     
         16 . The microelectronic topography of  claim 15 , wherein a lower surface of the lower layer and a lower surface of the metal feature are substantially coplanar. 
     
     
         17 . The microelectronic topography of  claim 15 , wherein a thickness of the upper layer is less than approximately 500 angstroms. 
     
     
         18 . A microelectronic topography comprising a metal feature having a single layer lining a lower surface and sidewalls of the metal feature, wherein the single layer comprises:
 three elements each comprising between approximately 0.1% and approximately 20% of a molar concentration of the barrier layer; and   a fourth element comprising the balance of the molar concentration.   
     
     
         19 . The microelectronic topography of  claim 18 , wherein the three elements are selected from a group consisting of boron, chromium, molybdenum, phosphorus, rhenium, and tungsten. 
     
     
         20 . The microelectronic topography of  claim 18 , wherein the fourth element comprises cobalt or nickel. 
     
     
         21 . The microelectronic topography of  claim 18 , wherein the single barrier layer is configured to substantially prevent oxidation. 
     
     
         22 . The microelectronic topography of  claim 18 , wherein the metal feature further comprises a bulk metal layer arranged upon and in contact with the single barrier layer, wherein the single barrier layer is configured to substantially prevent diffusion of the bulk metal layer to other layers within the microelectronic topography. 
     
     
         23 . The microelectronic topography of  claim 22 , wherein the metal feature further comprises a second single barrier layer arranged upon and in contact with the bulk metal layer, wherein the second single barrier layer comprises at least four elements. 
     
     
         24 . A system, comprising:
 a processing chamber configured to conduct an electroless deposition process and processes performed prior to or subsequent to the electroless deposition process;   analytical test equipment coupled to the processing chamber for monitoring fluids used for the electroless deposition process and processes performed prior to or subsequent to the electroless deposition process, wherein the analytical test equipment is configured to measure the concentration of at least four components within the fluids selected from a group consisting of boron, chromium, cobalt, molybdenum, nickel, phosphorus, rhenium, and tungsten; and   a carrier medium comprising program instructions executable on a computer system for adjusting compositions of the fluids based upon the analysis performed by the analytical test equipment.   
     
     
         25 . The system of  claim 24 , wherein the analytical test equipment is coupled to an outlet of the processing chamber. 
     
     
         26 . The system of  claim 24 , wherein the analytical test equipment is coupled to an inlet of the processing chamber. 
     
     
         27 . The system of  claim 24 , further comprising a plurality of storage tanks comprising the fluids, wherein the analytical test equipment is coupled to one or more of the storage tanks. 
     
     
         28 . The system of  claim 24 , wherein the carrier medium comprises programs instructions executable on a computer system for adjusting the compositions of the fluids during the electroless deposition process or processes prior to or subsequent to the electroless deposition process.