Deposition apparatus and method of manufacturing semiconductor device using the same

Abstract

Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

1 . A deposition apparatus comprising:
 a reaction chamber in which a reaction space is formed;   a substrate support and a shower head disposed in the reaction chamber to face each other;   a gaseous source supply unit connected to the shower head to supply a gaseous source;   a liquid source supply unit installed to be separated from the gaseous source supply unit and connected to the shower head to supply a liquid source; and   a reaction gas supply unit installed to be separated from the gaseous source supply unit and the liquid source supply unit and connected to the shower head to supply a reaction gas.   
     
     
         2 . The deposition apparatus of  claim 1 , wherein the gaseous source supply unit comprises a gaseous source supply pipe connected to the shower head, and the liquid source supply unit comprises a liquid source supply pipe connected to the shower head, wherein the gaseous source supply pipe is disposed in the liquid source supply pipe. 
     
     
         3 . The deposition apparatus of  claim 1 , further comprising:
 a first plasma generating unit disposed at least one of an upper part and a side part of the reaction chamber; and   a second plasma generating unit connected to a part of the reaction gas supply unit.   
     
     
         4 . A method of manufacturing a semiconductor device by using a deposition apparatus in which a gaseous source supply unit configured to supply a gaseous source, a liquid source supply unit configured to supply a liquid source and a dopant source, and a reaction gas supply unit configured to supply a reaction gas are installed to be separated from each other and connected to a reaction chamber in which a reaction space is formed,
 the method comprising:   forming an etch stop layer on a substrate by using the gaseous source; and   forming an interlayer insulation layer on the etch stop layer by vaporizing the liquid source, supplying the vaporized liquid source into the reaction chamber, and supplying the dopant source into the reaction chamber,   wherein the etch stop layer and the interlayer insulation layer are formed in-situ in the reaction chamber.   
     
     
         5 . The method of  claim 4 , further comprising forming a liner on the etch stop layer by using reaction gas radicals and the vaporized liquid source. 
     
     
         6 . The method of  claim 5 , wherein the etch stop layer, the liner, and the interlayer insulation layer are formed in-situ in the reaction chamber. 
     
     
         7 . The method of  claim 4 , further comprising forming a liner on the substrate by using reaction gas radicals and the vaporized liquid source, or by using a pretreatment process. 
     
     
         8 . The method of  claim 7 , wherein the etch stop layer, the liner, and the interlayer insulation layer are formed in-situ in the reaction chamber. 
     
     
         9 . A method of manufacturing a semiconductor device, the method comprising:
 preparing a reaction chamber provided with a gaseous source supply unit, a liquid source supply unit, and a reaction gas supply unit;   loading a substrate into the reaction chamber;   forming an etch stop layer on the substrate by supplying a gaseous source from the gaseous source supply unit;   after interrupting the supplying of the gaseous source, supplying a vaporized liquid source from the liquid source supply unit, and supplying a reaction gas from the reaction gas supply unit while applying an electric field to the reaction gas supply unit to generate reaction gas radicals;   forming a liner on the etch stop layer by introducing the reaction gas radicals and the vaporized liquid source into the reaction chamber; and   forming an interlayer insulation layer on the liner by supplying the vaporized liquid source and a vaporized dopant source from the liquid source supply unit as interrupting the supplying of the reaction gas and the applying of the electric field.   
     
     
         10 . The method of  claim 9 , wherein the electric field is generated using a plasma generating unit connected to the reaction gas supply unit. 
     
     
         11 . The method of  claim 9 , wherein after the forming of the interlayer insulation layer, the method further comprises removing unreacted gas from the reaction chamber by using a cleaning gas supplied from the reaction gas supply unit. 
     
     
         12 . The method of  claim 11 , wherein the cleaning gas is the same as the reaction gas.