Local integration of non-linear sheet i integrated circuit packages for esd/eos protection

Abstract

A packaged semiconductor device ( 200 ) with a substrate ( 220 ) having, sandwiched in an insulator ( 221 ), a flat sheet-like sieve member ( 240 ) made of a non-linear material switching from insulator to conductor mode at a preset voltage. Both member surfaces are free of indentations; the member is perforated by through-holes, which are grouped into a first set ( 241 ) and a second set ( 242 ). Metal traces ( 251 ) over one member surface are positioned across the first set through-holes ( 241 ); each trace is connected to a terminal on the substrate top and, through the hole, to a terminal on the substrate bottom. Analogous for metal traces ( 252 ) over the opposite member surface and second set through-holes ( 242 ). Traces ( 252 ) overlap with a portion of traces ( 252 ) to form the locations for the conductivity switches, creating local ultra-low resistance bypasses to ground for discharging overstress events.

1 . A device comprising:
 a semiconductor chip having on a first chip surface electrodes for ground, power, and for input and output signals;   a sheet of non-linear material of an uniform first thickness and a first surface and a second surface;   a first metal pattern having traces between gaps attached to the first surface of the sheet of non-linear material and electrically coupled to the semiconductor chip;   a second metal pattern have traces between gaps attached to the second surface of the sheet of non-linear material;   the sheet of non-linear material being switchable from being insulative to being conductive at a preset voltage across the first thickness;   a first trace of the first metal pattern overlapping a first trace of the second metal pattern across the sheet of non-linear material; and   the first trace of the first metal pattern electrically connected to a first electrode and the first trace of the second metal pattern electrically connected to a ground electrode.   
     
     
         2 . The device of  claim 1 , in which the sheet of non-linear material is perforated with through-holes. 
     
     
         3 . The device of  claim 2 , further comprising conductive members extending through the through-holes. 
     
     
         4 . The device of  claim 3 , in which each conductive member is physically attached to a trace. 
     
     
         5 . The device of  claim 1 , in which the first electrode is an electrode for power. 
     
     
         6 . The device of  claim 1 , in which the first electrode is an electrode for input signal. 
     
     
         7 . The device of  claim 1 , in which the first electrode is an electrode for output signal. 
     
     
         8 . The device of  claim 1 , in which the semiconductor chip has a plurality of ground electrode. 
     
     
         9 . The device of  claim 8 , in which the plurality of ground electrode are physically connected by traces. 
     
     
         10 . The device of  claim 1 , in which the non-linear material between the overlapping portion of the first trace of the first metal pattern and the first trace of the second metal pattern switches from insulative to conductive when the first electrode receives a voltage spike higher than the present voltage. 
     
     
         11 . The device of  claim 10 , in which the switched conductive material reverts to insulative after the spike dissipates from the first electrode. 
     
     
         12 . The device of  claim 1 , further comprising insulated material laminated to the metal traces and co-extensive with the sheet of non-linear material.