Conductive film structure, fabrication method thereof, and conductive film type probe device for ic
Abstract
A method for forming a conductive film structure is provided, which includes providing a flexible insulating substrate, forming a conductive film overlying the flexible insulating substrate, patterning the conductive film to form a plurality of micro-wires overlying the flexible insulating substrate, wherein the micro-wires are extended substantially parallel to each other, forming an insulating layer overlying the flexible insulating substrate and the micro-wires, and winding or folding the flexible insulating substrate along an axis substantially parallel to an extending direction of the micro-wires to form a conducting lump.
Claims
exact text as granted — not AI-modified1 . A method for forming a conductive film structure, comprising:
providing a flexible insulating substrate; forming a conductive film overlying the flexible insulating substrate; patterning the conductive film to form a plurality of micro-wires overlying the flexible insulating substrate, wherein the micro-wires are extended substantially parallel to each other; forming an insulating layer overlying the flexible insulating substrate and the micro-wires; and winding or folding the flexible insulating substrate along an axis substantially parallel to an extending direction of the micro-wires to form a conducting lump, wherein two terminal ends of each of the micro-wires are exposed at two opposite surfaces of the conducting lump.
2 . The method for forming a conductive film structure as claimed in claim 1 , further comprising removing a portion of the flexible insulating substrate such that at least one end of the micro-wires protrudes from the conducting lump.
3 . The method for forming a conductive film structure as claimed in claim 1 , further comprising depositing a conductive material overlying two opposite ends of the micro-wires by electrochemical deposition to elongate the micro-wires such that the opposite ends thereof are exposed or protrude from the conducting lump.
4 . The method for forming a conductive film structure as claimed in claim 1 , wherein the patterning of the conductive film comprises removing a portion of the conductive film by an energy beam comprising a laser beam, ion beam, electron beam, plasma, or combinations thereof.
5 . The method for forming a conductive film structure as claimed in claim 1 , wherein the winding of the flexible insulating substrate is a direct winding.
6 . The method for forming a conductive film structure as claimed in claim 1 , wherein the flexible insulating substrate is wound around a winding core.
7 . The method for forming a conductive film structure as claimed in claim 1 , wherein the flexible insulating substrate comprises a polymer comprising polydimethylsiloxane, polyimide, polyethylene terephthalate, derivatives thereof, or combinations thereof.
8 . The method for forming a conductive film structure as claimed in claim 1 , wherein the micro-wires comprise nickel, cobalt, gold, copper, aluminum, platinum, indium tin oxide, indium zinc oxide, or combinations thereof.
9 . The method for forming a conductive film structure as claimed in claim 1 , further comprising cutting the conducting lump to obtain a smaller conducting lump.
10 . The method for forming a conductive film structure as claimed in claim 1 , wherein each spacing between the micro-wires is substantially the same.
11 . The method for forming a conductive film structure as claimed in claim 1 , wherein the insulating layer comprises a polymer, an adhesive, an adhesive polymer, or combinations thereof.
12 . The method for forming a conductive film structure as claimed in claim 1 , wherein the insulating layer comprises a polymer layer with an adhesive layer added thereon or an adhesive polymer layer.Join the waitlist — get patent alerts
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