Semiconductor device including semiconductor construct installed on base plate, and manufacturing method of the same

Abstract

A semiconductor device comprises a semiconductor construct including a semiconductor substrate, and an external connection electrode provided to protrude on the surface of the semiconductor substrate, a base plate on which the semiconductor construct is installed, and a sealing layer stacked on the semiconductor substrate except for the external connection electrode and on the base plate including the side surface of the semiconductor substrate.

1 . A semiconductor device comprising:
 a semiconductor construct including a semiconductor substrate, and an external connection electrode provided to protrude on the surface of the semiconductor substrate;   a base plate on which the semiconductor construct is installed; and   a sealing layer stacked on the semiconductor substrate except for the external connection electrode and on the base plate including the side surface of the semiconductor substrate.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the sealing layer is formed by putting the external connection electrode through a prepreg and curing the prepreg.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein
 the sealing layer is a single layer, and is made of a glass fiber reinforced epoxy resin, a glass fiber reinforced polyimide resin, or an epoxy resin or polyimide resin which is not fiber reinforced.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein
 a connection pad and a wiring line which is provided to be connected to the connection pad are provided on the semiconductor substrate, and the external connection electrode is provided on a land of the wiring line.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein
 the semiconductor substrate is bonded onto the base plate by an adhesive layer.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein
 an upper wiring line is provided on the sealing layer to be directly connected to the external connection electrode without any insulating film in between.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein
 the external connection electrode is a columnar electrode.   
     
     
         8 . A semiconductor device manufacturing method comprising:
 mounting a plurality of semiconductor constructs on a base plate, each of the semiconductor constructs including an external connection electrode provided to protrude on the surface of a semiconductor substrate; and   stacking a sealing layer on the semiconductor substrate except for the external connection electrode and on the base plate including the side surface of the semiconductor substrate.   
     
     
         9 . The semiconductor device manufacturing method according to  claim 8 , wherein
 to stack the sealing layer, a prepreg is laid on the semiconductor substrate and the base plate, the external connection electrode is put through the prepreg, and the prepreg is cured into the sealing layer.   
     
     
         10 . The semiconductor device manufacturing method according to  claim 8 , wherein
 the semiconductor substrate is a chipped semiconductor substrate,   the semiconductor substrates are installed on the base plate before the sealing layer is stacked,   to stack the sealing layer, a prepreg is laid on the base plate and a plurality of semiconductor substrates, the external connection electrode is put through the prepreg, and the prepreg is cured into the sealing layer, and   the base plate and the sealing layer are diced after the sealing layer is stacked.   
     
     
         11 . The semiconductor device manufacturing method according to  claim 9 , wherein
 the prepreg is a single layer, and is made of a glass fiber reinforced epoxy resin, a glass fiber reinforced polyimide resin, or an epoxy resin or polyimide resin which is not fiber reinforced.   
     
     
         12 . The semiconductor device manufacturing method according to  claim 8 , wherein
 a connection pad and a wiring line which is formed to be connected to the connection pad are formed on the semiconductor substrate, and the external connection electrode is provided on a land of the wiring line.   
     
     
         13 . The semiconductor device manufacturing method according to  claim 8 , wherein
 the semiconductor substrate is bonded onto the base plate by an adhesive layer.   
     
     
         14 . The semiconductor device manufacturing method according to  claim 8 , wherein
 an upper wiring line is formed on the sealing layer to be directly connected to the external connection electrode without any insulating film in between.   
     
     
         15 . The semiconductor device manufacturing method according to  claim 8 , wherein
 the external connection electrode is a columnar electrode.