Sputtering target with an insulating ring and a gap between the ring and the target

Abstract

A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

1 . A sputtering plasma reactor for plasma vapor deposition (PVD), the reactor comprising:
 a PVD chamber wall;   a PVD target, wherein the target and the PVD chamber wall form a vacuum chamber, and wherein at least the portion of the target facing said vacuum chamber is composed of material to be sputtered;   an insulating ring positioned between the target and the PVD chamber wall;   a first O-ring provided to establish a vacuum seal between the target and the insulating ring;   a second O-ring provided to establish a vacuum seal between the insulating ring and the PVD chamber wall; and   at least one spacer positioned between the target and the insulating ring, wherein each of the at least one spacer contacts both the insulating ring and the target to provide a gap between the insulating ring and the target.   
     
     
         2 . The sputtering plasma reactor of  claim 1 , wherein each of the at least one spacer is disposed within a counter bore. 
     
     
         3 . The sputtering plasma reactor of  claim 2 , wherein the counter bore is formed into the insulating ring. 
     
     
         4 . The sputtering plasma reactor of  claim 2 , wherein the counter bore is formed into the target. 
     
     
         5 . The sputtering plasma reactor of  claim 1 , wherein the entirety of the at least one spacer is located between the insulating ring and the target. 
     
     
         6 . The sputtering plasma reactor of  claim 1 , wherein at least a portion of each of the at least one spacer is located beyond the insulating ring and the target. 
     
     
         7 . The sputtering plasma reactor of  claim 1 , wherein the at least one spacer comprises a plurality of spacers disposed between the target and the isolation ring in a spaced-apart manner. 
     
     
         8 . The sputtering plasma reactor of  claim 1 , wherein the at least one spacer comprises a single annulus. 
     
     
         9 . The sputtering plasma reactor of  claim 8 , wherein the single annulus is received in an annular groove formed into the target at a position radially outward relative to the first O-ring. 
     
     
         10 . The sputtering plasma reactor of  claim 1 , wherein a portion of the at least one spacer is snappable into a groove formed into an outer circumferential edge of the target. 
     
     
         11 . The sputtering plasma reactor of  claim 10 , wherein the at least one spacer includes a tongue portion receivable between the target and insulating ring and a an arm extending from said tongue portion, the arm includes a post at a distal end thereof, the post being snappable into the groove formed into the target by frictional fit to secure the at least one spacer. 
     
     
         12 . The sputtering plasma reactor of  claim 11 , wherein the tongue portion has a thickness of between about 0.010 and 0.020 inches (0.25 and 0.50 mm) to form the gap between the target and the insulating ring. 
     
     
         13 . The sputtering plasma reactor of  claim 1 , wherein a portion of the at least one spacer is snappable into a groove formed into an outer circumferential edge of the insulating ring. 
     
     
         14 . The sputtering plasma reactor of  claim 13 , wherein the at least one spacer includes a tongue portion receivable between the target and insulating ring and a an arm extending from said tongue portion, the arm includes a post at a distal end thereof, the post being snappable into the groove formed into the insulating ring by frictional fit to secure the at least one spacer. 
     
     
         15 . The sputtering plasma reactor of  claim 14 , wherein the tongue portion has a thickness of between about 0.010 and 0.020 inches (0.25 and 0.50 mm) to form the gap between the target and the insulating ring. 
     
     
         16 . The sputtering plasma reactor of  claim 1 , wherein the at least one spacer is a coating applied to the target with an adhesive. 
     
     
         17 . A sputtering plasma reactor for plasma vapor deposition (PVD), the reactor comprising:
 a PVD chamber wall;   a PVD target having a first sealing surface, wherein the target and the PVD chamber wall form a vacuum chamber, and wherein at least the portion of the target facing said vacuum chamber is composed of material to be sputtered;   an insulating ring positioned between the target and the PVD chamber wall, the insulating ring having a second sealing surface, wherein the first sealing surface of the PVD target is positioned adjacent to the second sealing surface of the insulating ring;   a first O-ring located between the target and the insulating ring to provide a vacuum seal therebetween;   a second O-ring located between the insulating ring and the PVD chamber wall to provide a vacuum seal therebetween; and   at least one spacer positioned between the target and the insulating ring, wherein the spacer contacts the first sealing surface of the target and the second sealing surface of the insulating ring to maintain the target and the insulating ring in a spaced-apart relationship.   
     
     
         18 . The sputtering plasma reactor of  claim 17 , wherein the at least one spacer is an annular ring. 
     
     
         19 . The sputtering plasma reactor of  claim 18 , wherein the annular spacer is receivable within at least one of an annular groove formed into the target and an annular groove formed into the isolation ring. 
     
     
         20 . The sputtering plasma reactor of  claim 18 , wherein the annular groove is located radially outward of the first O-ring. 
     
     
         21 . A spacer for use in a sputtering plasma reactor, the spacer being disposed between a target and an isolation ring attached to a wall of the reactor for providing a gap between the target and the isolation ring, the spacer comprising:
 a tongue having a first contact surface and a second contact surface and a thickness defined by the first and second contact surfaces, wherein at least a portion of the first contact surface is engageable with the target and at least a portion of the second contact surface is engageable with the isolation ring, and the first contact surface is substantially parallel to the second contact surface.   
     
     
         22 . The spacer of  claim 21 , wherein the first and second contact surfaces are circular. 
     
     
         23 . The spacer of  claim 21 , wherein the first and second contact surfaces are annular. 
     
     
         24 . The spacer of  claim 21 , wherein the thickness is about 0.130 inches (3.30 mm). 
     
     
         25 . The spacer of  claim 21  further comprising an arm extending transversely from an end of the first contact surface or the second contact surface of the tongue, wherein the arm is snappingly engageable with a groove formed into an outer radial surface of the target or an outer radial surface of the isolation ring.