Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same

Abstract

Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.

1 . An apparatus for depositing an atomic layer using a neutral beam comprising:
 an ion source extracting an ion beam having a polarity from a gas injected through an inlet;   a reaction chamber into which the gas can be injected through the inlet, and that can locate a substrate to be treated on a path of the neutral beam;   a grid assembly located at one end of the ion source and having a plurality of grid holes accelerating a specific polarity of ion beam; and   a reflective body having a plurality of reflective body holes or slits corresponding to the grid holes of the grid assembly, and reflecting the ion beam passing through the grid holes inside the reflective body holes or slits to convert the ion beam into a neutral beam,   wherein a first reaction gas is injected into the reaction chamber to react with the substrate, and then a second reaction gas is injected through the inlet of the ion source to be converted into a neutral beam and radiated onto the substrate.   
     
     
         2 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the neutral beam is generated through reflection of an energetic ion beam by a reflective body, re-bonding, or charge exchange. 
     
     
         3 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein each grid hole has a diameter equal to or larger than that of each reflective body hole or slit. 
     
     
         4 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the reflective body holes or slits are tilted to a certain angle with respect to the ion beam such that the ion beam passing straight through the grid holes is reflected inside the reflective body holes or slits. 
     
     
         5 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the ion source is one of a capacitively coupled RF ion source, a helical wave bond ion source, a negative ion source, an electron-cyclotron reactor (ECR), and an inductively coupled plasma source. 
     
     
         6 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the ion beam is incident on the inner wall of the reflective body holes or slits at an angle of no more than 15°. 
     
     
         7 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the ion beam is incident on the inner wall of the reflective body holes or slits at an angle of no more than 40°. 
     
     
         8 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 1 , wherein the reflective body is formed of a mirror surface of a conductive material or a metal substrate selected from a semiconductor substrate, diamond like carbon (DLC), and glassy carbon. 
     
     
         9 . The apparatus for depositing an atomic layer using a neutral beam according to claim, wherein a first reaction gas containing a material that is chemisorbed onto the substrate and a material that is not chemisorbed onto the substrate, and an inert gas are injected into the reaction chamber. 
     
     
         10 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 9 , wherein the gas injected into the ion source is a second reaction gas for removing a material that is not chemisorbed onto the substrate. 
     
     
         11 . The apparatus for depositing an atomic layer using a neutral beam according to  claim 10 , wherein, after the second reaction gas injected into the ion source is ionized to form an ion beam, the ion beam is converted into a neutral beam by reflection from the reflective body, re-bonding, or charge exchange, and then the neutral beam is radiated onto the substrate to remove a material that is not chemisorbed onto the substrate.