US2011165731A1PendingUtilityA1

Method for Fabricating Array-Molded Package-on-Package

51
Assignee: TEXAS INSTRUMENTS INCPriority: May 18, 2007Filed: Mar 17, 2011Published: Jul 7, 2011
Est. expiryMay 18, 2027(~0.8 yrs left)· nominal 20-yr term from priority
H10P 58/00H10W 90/754H10W 90/734H10W 90/724H10W 90/722H10W 74/10H10W 74/00H10W 72/9415H10W 72/9226H10W 72/07251H10W 72/07236H10W 72/5363H10W 72/952H10W 72/942H10W 72/923H10W 72/884H10W 72/536H10W 72/252H10W 72/20H10W 70/60H10W 90/701H10W 90/00H10W 74/016H10W 74/014H10W 70/657H10W 72/0198
51
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Claims

Abstract

An improved semiconductor device package is manufactured by attaching semiconductor chips ( 130 ) on an insulating substrate ( 101 ) having contact pads ( 103 ). A mold is provided, which has a top portion ( 210 ) with metal protrusions ( 202 ) at locations matching the pad locations. The protrusions are shaped as truncated cones. The substrate and the chips are loaded onto the bottom mold portion ( 310 ); the mold is closed by clamping the top portion onto the bottom portion so that the protrusions approach the contact pads. Encapsulation compound is introduced into the cavity and the protrusions create apertures through the encapsulation compound towards the pad locations.

Claims

exact text as granted — not AI-modified
1 . A method for fabricating a semiconductor device comprising introducing a molding compound into a cavity to form a encapsulation body covering a semiconductor chip and linear arrays of contact pads adjacent to the chip, leaving a conical aperture in the encapsulation body over each contact pad corresponding to a conical protrusion in the cavity and leaving a layer of the molding compound of a first thickness between each contact pad and the corresponding conical aperture in the encapsulation body over the contact pad. 
     
     
         2 . The method of  claim 1 , further comprising removing the layer of molding compound of the first thickness between each contact pad and the corresponding conical aperture over the contact pad. 
     
     
         3 . The method of  claim 2 , in which the removal is performed using a laser. 
     
     
         4 . The method of  claim 2 , in which the removing step comprises a plasma cleanup process. 
     
     
         5 . The method of  claim 2 , in which the removing step comprises a chemical etch process. 
     
     
         6 . The method of  claim 2 , in which the semiconductor chip is disposed on a substrate. 
     
     
         7 . The method of  6 , in which the molding compound covers a first surface of the substrate on which the semiconductor chip is disposed and does not cover a second surface opposite the first surface. 
     
     
         8 . The method of  claim 7 , in which a plurality of similar semiconductor chip are disposed on the first surface of the substrate. 
     
     
         9 . The method of  claim 8 , further comprising a step of sawing the substrate along saw lines thus singulating the semiconductor chips. 
     
     
         10 . The method of  claim 9 , in which the sawing cuts the substrate and the encapsulating body. 
     
     
         11 . The method of  claim 2 , further comprising filling the apertures with solder material. 
     
     
         12 . The method of  claim 11 , further comprising connecting a packaged second semiconductor device to the solder material. 
     
     
         13 . The method of  claim 12 , further comprising connecting solder material to the second surface of the substrate.

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