US2011177688A1PendingUtilityA1

Packaging board and manufacturing method therefor, semiconductor module and manufacturing method therefor, and portable device

Assignee: SANYO ELECTRIC COPriority: Apr 27, 2007Filed: Mar 28, 2011Published: Jul 21, 2011
Est. expiryApr 27, 2027(~0.7 yrs left)· nominal 20-yr term from priority
H10W 72/07251H10W 72/922H10W 72/251H10W 72/242H10W 72/29H10W 72/20H10W 72/952H10W 72/923H10W 70/69H10W 70/68H10W 70/05H10W 72/244H10W 72/019H10W 72/012
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Claims

Abstract

A method for manufacturing a semiconductor module includes: a first process of forming a conductor on one face of an insulating layer; a second process of exposing the conductor from the other face of the insulating layer; a third process of providing a first wiring layer on an exposed area of the conductor and on the other face of the insulating layer; a fourth process of preparing a substrate on which a circuit element is formed, the second wiring being formed on the substrate; and a fifth process of embedding the conductor in the insulating layer by press-bonding the insulating layer and the substrate in a state where the conductor on which the first wiring layer is provided by the third process is disposed counter to the second wiring layer. Wiring is formed without causing damaging to the circuit element.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a semiconductor module, the method including:
 a first process of forming a conductor on one face of an insulating layer;   a second process of exposing the conductor from the other face of the insulating layer;   a third process of providing a first wiring layer on an exposed area of the conductor and on the other face of the insulating layer;   a fourth process of preparing a substrate on which a circuit element is formed wherein a second wiring is formed on the substrate; and   a fifth process of embedding the conductor in the insulating layer by press-bonding the insulating layer and the substrate in a state where the conductor on which the first wiring layer is provided by said third process is disposed counter to the second wiring layer.   
     
     
         2 . A method for manufacturing a semiconductor module, the method including:
 a first process of forming a conductor on one face of an insulating layer which contains fibrous filler material whose coefficient of thermal expansion is small than that of the insulating layer, wherein the fibrous filler material is arranged so that a direction of fibers thereof intersects with a thickness direction of the insulating layer;   a second process of exposing the conductor from the other face of the insulating layer;   a third process of providing a first wiring layer on an exposed area of the conductor and on the other face of the insulating layer;   a fourth process of preparing a substrate on which a circuit element is formed wherein a second wiring is formed on the substrate; and   a fifth process of embedding the conductor in the insulating layer by press-bonding the insulating layer and the substrate in a state where the conductor on which the first wiring layer is provided by said third process is disposed counter to the second wiring layer.   
     
     
         3 . A method for manufacturing a semiconductor module according to  claim 1 , wherein a means for roughening an exposed face of the conductor is used in said second process. 
     
     
         4 . A method for manufacturing a semiconductor module according to  claim 3 , wherein laser is used as the roughing means,
 a via hole having a larger diameter than a spot diameter of the laser is formed from the other face of the insulating layer and   the exposed face of the conductor is roughened by a plurality of laser irradiations.   
     
     
         5 . A method for manufacturing a semiconductor module according to  claim 3 , wherein in said second process an opening is formed from the other face of the insulating layer in a manner such that an arithmetic mean roughness of the exposed face of the conductor is 2 to 50 μm. 
     
     
         6 . A method for manufacturing a semiconductor module according to  claim 1 , wherein in said first process the height of the conductor in a direction vertical to the face of the insulating layer is smaller than a length of the conductor in a direction parallel to the face of the insulating layer. 
     
     
         7 . A method for manufacturing a packaging board, the method including:
 a first process of forming a conductor on one face of an insulating layer;   a second process of exposing the conductor from the other face of the insulating layer; and   a third process of providing a wiring layer on an exposed area of the conductor and on the other face of the insulating layer,   wherein a means for roughening an exposed face of the conductor is used in said second process.   
     
     
         8 . A method for manufacturing a packaging board according to  claim 7 , wherein in said first process the insulating layer contains fibrous filler material whose coefficient of thermal expansion is smaller than that of the insulating layer, the fibrous filler material being arranged so that a direction of fibers thereof intersects with a thickness direction of the insulating layer. 
     
     
         9 . A method for manufacturing a packaging board according to  claim 8 , wherein laser is used as the roughing means,
 a via hole having a larger diameter than a spot diameter of the laser is formed from the other face of the insulating layer and   the exposed face of the conductor is roughened by a plurality of laser irradiations.   
     
     
         10 . A method for manufacturing a packaging hoard according to  claim 7 , wherein in said second process an opening is formed from the other face of the insulating layer in a manner such that an arithmetic mean roughness of the exposed face of the conductor is 2 to 50 μm. 
     
     
         11 . A method for manufacturing a packaging board according to  claim 7 , wherein in said first process the height of the conductor in a direction vertical to the face of the insulating layer is smaller than a length of the conductor in a direction parallel to the face of the insulating layer. 
     
     
         12 - 18 . (canceled)

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