Semiconductor cleaning using superacids

Abstract

A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

1 - 20 . (canceled) 
     
     
         21 . A method of cleaning submicron features on a semiconductor substrate comprising contacting a surface of the semiconductor substrate with a composition comprising a superacid. 
     
     
         22 . The method of  claim 21 , wherein the superacid includes a mixture of FSO 3 H, SbF 5 , and SO 2 ; a mixture of HF and BF 3 ; or a mixture of SbF 5  and HF 
     
     
         23 . The method of  claim 21 , wherein the semiconductor substrate includes a photoresist. 
     
     
         24 . The method of  claim 21 , wherein the surface is contacted with the composition for a period of time ranging from 30 seconds to 30 minutes. 
     
     
         25 . The method of  claim 21 , wherein the surface is contacted with the composition for a period of time ranging from 30 seconds to 2 minutes. 
     
     
         26 . The method of  claim 21 , wherein the surface is contacted with the composition for a period of time ranging from 2 minutes to 30 minutes. 
     
     
         27 . The method of  claim 21 , wherein the surface is contacted with the composition at a temperature between 20° C. and 70° C. 
     
     
         28 . The method of  claim 21 , wherein the surface is contacted with the composition at a temperature between 20° C. and 50° C. 
     
     
         29 . The method of  claim 21 , wherein the surface is contacted with the composition at a temperature between 20° C. and 35° C. 
     
     
         30 . The method of  claim 21 , further comprising rinsing the semiconductor substrate with water after contacting the semiconductor substrate with the composition. 
     
     
         31 . The method of  claim 30 , further comprising rinsing the semiconductor substrate with a solvent prior to rinsing the semiconductor substrate with water. 
     
     
         32 . The method of  claim 21 , wherein the superacid is discharged toward the semiconductor substrate through at least one nozzle oriented at an angle between about 0° and about 45° with respect to the surface. 
     
     
         33 . The method of  claim 21 , wherein the superacid is discharged toward the semiconductor substrate through at least one nozzle oriented at an angle between about 0° and about 25° with respect to the surface. 
     
     
         34 . The method of  claim 21 , wherein the superacid is discharged toward the semiconductor substrate through at least one nozzle oriented at an angle no more than about 5° transverse to the surface. 
     
     
         35 . A semiconductor substrate cleaned according to the method of  claim 21 . 
     
     
         36 . The semiconductor substrate of  claim 35 , wherein the semiconductor substrate is a wafer. 
     
     
         37 . A method of removing metal ions from submicron features on a semiconductor wafer comprising contacting the semiconductor wafer with a composition comprising a superacid at a temperature and for a time sufficient to dislodge residue therefrom. 
     
     
         38 . A method of removing metal ions from submicron features on a semiconductor wafer comprising contacting the semiconductor wafer with a composition comprising a superacid at a temperature and for a time sufficient to strip photoresist therefrom. 
     
     
         39 . A process for removing metal ions from submicron features on an integrated circuit, which comprises contacting the integrated circuit with a composition comprising a superacid at a temperature and for a time sufficient to remove the residue from the integrated circuit. 
     
     
         40 . The method of  claim 21 , wherein the submicron features comprise memory. 
     
     
         41 . The method of  claim 21 , wherein the superacid in the composition is diluted in the range of 2-10% by weight. 
     
     
         42 . A method of cleaning metal ions from submicron features on a semiconductor substrate comprising contacting a surface of the semiconductor substrate with a composition comprising a superacid.