Post-cmp treating liquid and manufacturing method of semiconductor device using the same

Abstract

Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

1 . A post-CMP treating liquid comprising:
 water;   an amphoteric surfactant;   an anionic surfactant;   a complexing agent;   resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm; and   tetramethyl ammonium hydroxide;   the treating liquid having a pH ranging from 4 to 9 and exhibiting a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.   
     
     
         2 . The post-CMP treating liquid according to  claim 1 , wherein the amphoteric surfactant contains at least one selected from the group consisting of lauryl betaine, stearyl betaine, lauryl dimethylamine oxide, and 2-alkyl-N-carboxymethyl-N-hydroxyethyl imidazolinium betaine. 
     
     
         3 . The post-CMP treating liquid according to  claim 1 , wherein the amphoteric surfactant is lauryl dimethylaminoacetic acid betaine. 
     
     
         4 . The post-CMP treating liquid according to  claim 1 , wherein the amphoteric surfactant is included at a concentration ranging from 0.0001 to 0.1 wt %. 
     
     
         5 . The post-CMP treating liquid according to  claim 4 , wherein the amphoteric surfactant is included at a concentration ranging from 0.005 to 0.05 wt %. 
     
     
         6 . The post-CMP treating liquid according to  claim 1 , further comprising a reducing agent. 
     
     
         7 . A post-CMP treating liquid comprising:
 water;   polyphenol;   an anionic surfactant;   ethylene diamine tetraacetic acid;   resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm; and   tetramethyl ammonium hydroxide;   the treating liquid having a pH ranging from 4 to 9 and exhibiting a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.   
     
     
         8 . The post-CMP treating liquid according to  claim 7 , wherein the polyphenol is selected from the group consisting of catechin, anthocyanidin, flavan-3,4-diol, proanthocyanidin, rutin, isoflavone, tannin and chlorogenic acid. 
     
     
         9 . The post-CMP treating liquid according to  claim 7 , wherein the polyphenol comprises at least catechin. 
     
     
         10 . The post-CMP treating liquid according to  claim 7 , wherein the polyphenol is included at a concentration ranging from 0.0001 to 0.1 wt %. 
     
     
         11 . The post-CMP treating liquid according to  claim 10 , wherein the polyphenol is included at a concentration ranging from 0.005 to 0.05 wt %.