Dielectric layer structure

Abstract

A dielectric layer structure includes an interlayer dielectric (ILD) layer covering at least a metal interconnect structure and a single tensile film. The ILD layer further includes a low-k dielectric layer, and the single tensile film is positioned on the low-k dielectric layer for counteracting at least a part of a stress of the low-k dielectric layer.

1 . A dielectric layer structure comprising:
 an interlayer dielectric (ILD) layer covering at least a metal interconnect structure, wherein the ILD layer comprises a low-k dielectric layer; and   a single tensile film positioned on the low-k dielectric layer for counteracting at least a part of a stress of the low-k dielectric layer.   
     
     
         2 . The dielectric layer structure of  claim 1 , wherein the low-k dielectric layer comprises porous low-k dielectric material or ultra low-k (ULK) dielectric material. 
     
     
         3 . The dielectric layer structure of  claim 1 , wherein the low-k dielectric layer comprises a thickness of 800-5000 angstroms. 
     
     
         4 . The dielectric layer structure of  claim 3 , wherein the single tensile film comprises a thickness of 200-1500 angstroms. 
     
     
         5 . The dielectric layer structure of  claim 1 , wherein the single tensile film comprises a hydrophobic film. 
     
     
         6 . The dielectric layer structure of  claim 1 , wherein the single tensile film comprises tetra-ethyl-ortho-silicate (TEOS). 
     
     
         7 . The dielectric layer structure of  claim 1 , wherein the single tensile film further comprises a nitrified surface. 
     
     
         8 . The dielectric layer structure of  claim 1  further comprises a hard mask layer positioned on the single tensile film. 
     
     
         9 . The dielectric layer structure of  claim 8 , wherein the metal hard mask, the single tensile film and the ILD layer further comprise at least an opening for exposing the metal interconnect structure.