Sequential pulse deposition

Abstract

A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.

1 . A method of forming a film on a substrate, comprising:
 flowing a purge gas into a reaction chamber containing the substrate;   injecting a pulse of precursor gas into the reaction chamber to initiate depositing a film on the substrate;   injecting a pulse of reactant gas into the reaction chamber at a reactant gas pulse time, the reactant gas pulse time being after the pulse of precursor gas has been injected into the reaction chamber and prior to complete purge of the precursor gas; and   reacting the precursor gas with the reactant gas adjacent the substrate to deposit a layer of the film on the substrate.   
     
     
         2 . The method of  claim 1 , wherein the above process is repeated until the film has a desired thickness, with injection of another pulse of precursor gas into the chamber after the reactant gas pulse time and prior to complete purge of the reactant gas. 
     
     
         3 . The method of  claim 1 , wherein reacting the precursor with the reactant forms a layer on the substrate at a rate greater than 100 Å/cycle.