US2011220512A1PendingUtilityA1
Plating bath and method
Est. expiryMar 15, 2030(~3.7 yrs left)· nominal 20-yr term from priority
C25D 3/38C07D 233/60
55
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.
Claims
exact text as granted — not AI-modified1 . A reaction product of one or more imidazole compounds with one or more epoxide-containing compounds; wherein at least one imidazole compound has the formula
wherein R 1 , R 2 and R 3 are independently chosen from H, (C 1- C 12 )alkyl, (C 2 -C 12 )alkenyl and aryl and provided that R 1 and R 2 are not both H.
2 . The reaction product of claim 1 wherein R 1 , R 2 and R 3 are independently chosen from H, (C 1- C 8 )alkyl, (C 2 -C 7 )alkenyl, or aryl.
3 . The reaction product of claim 1 wherein the (C 1 -C 12 )alkyl groups and the (C 2 -C 12 )alkenyl groups are each substituted with one or more of hydroxyl groups, halogen, and aryl groups.
4 . The reaction product of claim 1 wherein the epoxide-containing compound is chosen from compounds of the formulae
where Y, Y 1 and Y 2 are independently chosen from H and (C 1 -C 4 )alkyl; X=halogen; A=OR 4 or R 5 ; R 4 ═((CR 6 R 7 ) m O) n , (aryl-O) p , CR 6 R 7 —Z—CR 6 R 7 O or OZ 1 t O; R 5 ═(CH 2 ) y ; A1 is (C 5 -C 12 )cycloalkyl; Z=a 5- or 6-membered ring; Z 1 is R 12 OArOR 12 , (R 13 O) a Ar(OR 13 ) a , or (R 13 O) a Cy(OR 13 ) a ; Cy═(C 5 -C 12 )cycloalkyl; each R 6 and R 7 are independently chosen from H, CH 3 and OH; each R 11 represents (C 1 -C 4 )alkyl or (C 1 -C 4 )alkoxy; each R 12 represents (C 1 -C 8 )alkyl; each R 13 represents a (C 2 -C 6 )alkyleneoxy; each a=1-10; m=1-6; n=1-20; p=1-6; q=1-6; r=0-4; t=1-4; and y=0-6; wherein Y and Y 1 may be taken together to form a (C 8 -C 12 )cyclic compound.
5 . A copper electroplating bath comprising: a source of copper ions, an electrolyte, and a leveling agent, wherein the leveling agent is a reaction product of one or more imidazole compounds with one or more epoxide-containing compounds; wherein at least one imidazole compound has the formula
wherein R 1 , R 2 and R 3 are independently chosen from H, (C 1- C 12 )alkyl, (C 2 -C 12 )alkenyl, and aryl and provided that R 1 and R 2 are not both H.
6 . The copper electroplating bath of claim 5 wherein at least one of R 1 and R 2 is chosen from (C 1- C 8 )alkyl, (C 3- C 7 )alkenyl and aryl.
7 . The copper electroplating bath of claim 6 wherein R 3 is H.
8 . The copper electroplating bath of claim 5 wherein the epoxide-containing compound comprises from 1 to 3 epoxy groups.
9 . The copper electroplating bath of claim 5 wherein the epoxide-containing compound is chosen from compounds of the formulae
where Y, Y 1 and Y 2 are independently chosen from H and (C 1 -C 4 )alkyl; X=halogen; A=OR 4 or R 5 ; R 4 ═((CR 6 R 7 ) m O) n , (aryl-O) p , CR 6 R 7 —Z—CR 6 R 7 O or OZ 1 t O; R 5 ═(CH 2 ) y ; A1 is (C 5 -C 12 )cycloalkyl; Z=a 5- or 6-membered ring; Z 1 is R 12 OArOR 12 , (R 13 O) a Ar(OR 13 ) a , or (R 13 O) a Cy(OR 13 ) a ; Cy=(C 5 -C 12 )cycloalkyl; each R 6 and R 7 are independently chose from H, CH 3 and OH; each R 11 represents (C 1 -C 4 )alkyl or (C 1 -C 4 )alkoxy; each R 12 represents (C 1 -C 8 )alkyl; each R 13 represents a (C 2 -C 6 )alkyleneoxy; each a=1-10; m=1-6; n=1-20; p=1-6; q=1-6; r=0-4; t=1-4; and y=0-6; wherein Y and Y 1 may be taken together to form a (C 8 -C 12 )cyclic compound.
10 . A method of depositing copper on a substrate comprising: contacting a substrate to be plated with copper into the copper electroplating bath of claim 5 ; and applying a current density for a period of time sufficient to deposit a copper layer on the substrate.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.