Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus

Abstract

This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

1 .- 5 . (canceled) 
     
     
         6 . A semiconductor device manufacturing method comprising:
 forming a resist film on one of a central portion of an upper surface of a to-be-processed substrate and both the central portion and a bevel portion of the upper surface obtained by chamfering a peripheral portion of the to-be-processed substrate;   forming a cover material film on the upper surface of the to-be-processed substrate so that the cover material film covers the resist film and reaches an end portion of the to-be-processed substrate;   executing pattern exposure for forming a latent image of a desired pattern on the resist film on the central portion of the upper surface while a liquid whose refractive index is higher than a refractive index of air exists between the cover material film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate;   exposing a peripheral portion including the bevel portion of the to-be-processed substrate after the executing the pattern exposure;   separating the cover material film after the executing the pattern exposure;   developing the resist film, on which the latent image is formed, after the separating the cover material film and the exposing the peripheral portion; and   removing the cover material film which remains on the end portion of the to-be-processed substrate by supplying a rinse solution to the end portion of the to-be-processed substrate after the exposing the peripheral portion.   
     
     
         7 . (canceled) 
     
     
         8 . The semiconductor device manufacturing method according to  claim 6 , wherein the forming the resist film comprises removing the resist film of a lower surface of the to-be-processed substrate by discharging a rinse solution to the lower surface after forming by spin coating the resist film on the upper surface of the to-be-processed substrate. 
     
     
         9 . The semiconductor device manufacturing method according to  claim 6 , wherein the to-be-processed substrate includes a semiconductor substrate and a thin film formed on the semiconductor substrate, and at least one of an anti reflection film and hard mask is formed between the thin film and the resist film. 
     
     
         10 . The semiconductor device manufacturing method according to  claim 6 , wherein the exposure apparatus includes a partial immersion exposure apparatus in which only an optical path positioned between the resist film and the constituent element and a peripheral portion of the optical path are filled with a medium fluid. 
     
     
         11 . A semiconductor device manufacturing method comprising:
 forming a resist film on one of a central portion of an upper surface of a to-be-processed substrate and both the central portion and a bevel portion of the upper surface obtained by chamfering a peripheral portion of the to-be-processed substrate;   forming a cover material film on the upper surface of the to-be-processed substrate so that the cover material film covers the resist film and reaches an end portion of the to-be-processed substrate, the cover material film being separated by a developer which develops the resist film;   executing pattern exposure for forming a latent image of a desired pattern on the resist film on the central portion of the upper surface while a liquid whose refractive index is higher than a refractive index of air exists between the cover material film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate;   exposing a peripheral portion including the bevel portion of the to-be-processed substrate after the executing the pattern exposure;   executing simultaneously separation of the cover material film and development of the resist film after the exposing the peripheral portion; and   removing the cover material film which remains on the end portion of the to-be-processed substrate by supplying a rinse solution to the end portion of the to-be-processed substrate after the executing the development of the resist film.   
     
     
         12 . (canceled) 
     
     
         13 . The semiconductor device manufacturing method according to  claim 11 , wherein the resist film comes in direct contact with the liquid. 
     
     
         14 . The semiconductor device manufacturing method according to  claim 11 , wherein the forming the resist film comprises removing the resist film of a lower surface of the to-be-processed substrate by discharging a rinse solution to the lower surface after forming by spin coating the resist film on the upper surface of the to-be-processed substrate. 
     
     
         15 . The semiconductor device manufacturing method according to  claim 11 , wherein the to-be-processed substrate includes a semiconductor substrate and a thin film formed on the semiconductor substrate, and at least one of an anti-reflection film and hard mask is formed between the thin film and the resist film. 
     
     
         16 . (canceled)