Stacked structure

Abstract

A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the layer is provided. The stacked structure includes an underlayer, a silicon rich organic layer, and a photoresist layer. The underlayer is on the material layer. The silicon rich organic layer is between the underlayer and the photoresist layer. The thickness of the photoresist layer is smaller than that of the underlayer and larger than two times of the thickness of the silicon rich organic layer. The thickness of the underlayer is smaller than three times of the predetermined opening width.

1 . A stacked structure for patterning a material layer to form an opening pattern with a predetermined opening width in the material layer, comprising:
 an underlayer, disposed on the material layer;   a silicon rich organic layer, disposed on the underlayer; and   a photoresist layer, disposed on the silicon rich organic layer, the thickness of the photoresist layer being larger than two times of the thickness of the silicon rich organic layer, but is smaller than the thickness of the underlayer.   
     
     
         2 . The stacked structure for patterning as claimed in  claim 1 , wherein the thickness of the underlayer is smaller than three times of the predetermined opening width. 
     
     
         3 . The stacked structure for patterning as claimed in  claim 1 , further comprising a hard mask layer disposed between the material layer and the underlayer, the thickness of the hard mask layer being slightly larger than the thickness of the silicon rich organic layer. 
     
     
         4 . The stacked structure for patterning as claimed in  claim 3 , wherein the thickness of the underlayer is smaller than three times of the predetermined opening width. 
     
     
         5 . The stacked structure for patterning as claimed in  claim 3 , wherein the material of the hard mask layer comprises silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and silicon carbonitride. 
     
     
         6 . The stacked structure for patterning as claimed in  claim 1 , wherein the underlayer comprises varnish resin. 
     
     
         7 . The stacked structure for patterning as claimed in  claim 6 , wherein the underlayer comprises the I-line photoresist layer.