Inventor · disambiguated record
Jiunn-Hsiung Liao
Also filed as: LIAO JIUNN-HSIUNG
72 granted patents·26 pending applications·210 citations·filing 2001–2025
98Inventor score
Top patents by PatentIndex Score
98 records- 0194US9741614B1Method of preventing trench distortionUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 22, 2017·12 cites·17 claims
- 0291US8310012B2Semiconductor device having metal gate and manufacturing method thereofHWANG GUANG-YAW·Filed 2010·Granted Nov 13, 2012·16 cites·17 claims
- 0390US7544623B2Method for fabricating a contact holeUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 9, 2009·21 cites·31 claims
- 0488US10109525B1Fabrication method and structure of semiconductor device with contact and plugUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 23, 2018·5 cites·20 claims
- 0588US7799511B2Method of forming a contact holeUNITED MICROELECTRONICS CORP·Filed 2007·Granted Sep 21, 2010·10 cites·11 claims
- 0688US7517766B2Method of removing a spacer, method of manufacturing a metal-oxide-semiconductor transistor device, and metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 14, 2009·12 cites·14 claims
- 0787US12349367B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 1, 2025·0 cites·7 claims
- 0887US2025301662A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0986US7432194B2Etching method and method for forming contact openingUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 7, 2008·9 cites·5 claims
- 1085US8704294B2Semiconductor device having metal gate and manufacturing method thereofLIAO PO-JUI·Filed 2011·Granted Apr 22, 2014·7 cites·8 claims
- 1185US8574990B2Method of manufacturing semiconductor device having metal gateLIAO PO-JUI·Filed 2011·Granted Nov 5, 2013·9 cites·20 claims
- 1284US10903269B2Magnetic memory device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 26, 2021·4 cites·20 claims
- 1384US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
- 1483US8952451B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Feb 10, 2015·5 cites·8 claims
- 1582US9779942B1Method of forming patterned mask layerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 3, 2017·3 cites·15 claims
- 1682US9023708B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 5, 2015·6 cites·18 claims
- 1781US8552503B2Strained silicon structureHWANG GUANG-YAW·Filed 2010·Granted Oct 8, 2013·6 cites·12 claims
- 1881US8298935B2Dual damascene processCHEN SHIN-CHI·Filed 2010·Granted Oct 30, 2012·5 cites·19 claims
- 1981US8168374B2Method of forming a contact holeCHOU PEI-YU·Filed 2010·Granted May 1, 2012·4 cites·9 claims
- 2078US8592321B2Method for fabricating an apertureCHANG FENG-YI·Filed 2011·Granted Nov 26, 2013·4 cites·14 claims
- 2178US7977244B2Semiconductor manufacturing processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 12, 2011·6 cites·12 claims
- 2277US11545522B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 3, 2023·0 cites·8 claims
- 2376US11785785B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 10, 2023·0 cites·8 claims
- 2476US7592265B2Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Sep 22, 2009·6 cites·20 claims
- 2575US8236702B2Method of fabricating openings and contact holesCHANG FENG-YI·Filed 2008·Granted Aug 7, 2012·6 cites·10 claims
- 2675US7767578B2Damascene interconnection structure and dual damascene process thereofUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 3, 2010·5 cites·30 claims
- 2774US8524608B1Method for fabricating a patterned structure of a semiconductor deviceKUO LUNG-EN·Filed 2012·Granted Sep 3, 2013·4 cites·17 claims
- 2874US7851370B2Patterning methodUNITED MICROELECTRONICS CORP·Filed 2007·Granted Dec 14, 2010·4 cites·20 claims
- 2973US10847709B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·1 cites·7 claims
- 3070US8691652B2Semiconductor processKUO LUNG-EN·Filed 2012·Granted Apr 8, 2014·3 cites·19 claims
- 3169US7615434B2CMOS device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 10, 2009·4 cites·10 claims
- 3267US10636744B2Memory device including alignment mark trenchUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 28, 2020·2 cites·20 claims
- 3367US9196524B2Manufacturing method of semiconductor deviceCHEN CHIEH-TE·Filed 2012·Granted Nov 24, 2015·2 cites·10 claims
- 3466US11283007B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 22, 2022·0 cites·11 claims
- 3566US8461649B2Opening structure for semiconductor deviceTSAO PO-CHAO·Filed 2011·Granted Jun 11, 2013·2 cites·9 claims
- 3666US7445726B2Photoresist trimming processUNITED MICROELECTRONICS CORP·Filed 2005·Granted Nov 4, 2008·2 cites·10 claims
- 3765US11056536B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 6, 2021·0 cites·1 claims
- 3864US9165997B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 20, 2015·1 cites·10 claims
- 3964US7868390B2Method for fabricating strained-silicon CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 11, 2011·2 cites·8 claims
- 4064US7378341B2Automatic process control of after-etch-inspection critical dimensionUNITED MICROELECTRONICS CORP·Filed 2006·Granted May 27, 2008·2 cites·36 claims
- 4163US8735295B2Method of manufacturing dual damascene structureLEE CHANG-HSIAO·Filed 2012·Granted May 27, 2014·2 cites·18 claims
- 4263US8282842B2Cleaning method following opening etchWANG CHIEH-JU·Filed 2007·Granted Oct 9, 2012·3 cites·16 claims
- 4362US9312258B2Strained silicon structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 12, 2016·1 cites·18 claims
- 4460US8828815B2Method for fabricating strained-silicon CMOS transistorCHOU PEI-YU·Filed 2010·Granted Sep 9, 2014·1 cites·10 claims
- 4560US8164141B2Opening structure with sidewall of an opening covered with a dielectric thin filmTSAO PO-CHAO·Filed 2010·Granted Apr 24, 2012·1 cites·12 claims
- 4657US11121307B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 14, 2021·0 cites·13 claims
- 4757US8252650B1Method for fabricating CMOS transistorCHANG FENG-YI·Filed 2011·Granted Aug 28, 2012·1 cites·15 claims
- 4855US8999830B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 7, 2015·0 cites·27 claims
- 4954US10699913B2Manufacturing method for trenchUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 30, 2020·0 cites·13 claims
- 5054US9620369B2Method for fabricating semiconductor device to integrate transistor with passive deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 11, 2017·0 cites·9 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →