Optical thin-film vapor deposition apparatus and optical thin-film production method

Abstract

A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates.

1 - 8 . (canceled) 
     
     
         9 . A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel, comprising:
 holding the substrates with a dome shaped holder disposed within the vacuum vessel;   rotating the dome shaped holder;   vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates;   supplying ions from an ion source to the substrates; and,   supplying neutralizing electrons from a neutralizer to the substrates;   wherein the ion source is disposed at a position such that a maximum angle defined between an axis, along which ions are supplied from the ion source, and a line perpendicular to a surface of each of the substrates held by the dome shaped holder, is between 8° inclusive and 40° inclusive; and wherein a ratio of a distance in a vertical direction between (i) an intersection between a center of a rotational axis of the dome shaped holder and the dome shaped holder itself, and (ii) a center of the ion source, relative to a diameter of the dome shaped holder, is within a range between 0.5 inclusive and 1.2 inclusive.   
     
     
         10 . The method of  claim 9 , wherein the ion source is disposed on a side surface of the vacuum vessel. 
     
     
         11 . The method of  claim 9 , wherein the ion source is disposed so that a distance between the ion source and an applicable one of the substrates is equal to or shorter than a mean free path of ions supplied from the ion source. 
     
     
         12 . The method of  claim 9 , wherein the supplying of ions from an ion source to the substrates comprises:
 supplying the ions from an ion source body;   connecting by use of a connecting portion the ion source body to the vacuum vessel; and,   vacuum-inward introducing at least a source gas of the ions into the vacuum vessel; and,   wherein the angle, at which the ions are supplied, relative to the line perpendicular to the surface of each of the substrates, is adjustable by modification of the connecting portion.   
     
     
         13 . The method of  claim 12 , wherein the connecting by use of a connecting portion of the ion source body to the vacuum vessel comprises:
 connecting by use of a bracket the ion source body to the vacuum vessel; and,   locking the ion source at a predetermined angle by use of a locking member so as to fix the inclination of the ion source at the predetermined angle.   
     
     
         14 . The method of  claim 9 , wherein the supplying of neutralizing electrons from a neutralizer to the substrates comprises supplying neutralizing electrons from a neutralizer that is disposed at a position separated from the ion source by a predetermined distance. 
     
     
         15 . The method of  claim 9 , wherein the supplying of ions from an ion source to the substrates comprises supplying ions from multiple ion sources provided along a rotating direction of the dome shaped holder.