Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device comprising a first insulating film provided on a semiconductor substrate in a cell transistor region, a first conductive film provided on the first insulating film, an inter-electrode insulating film provided on the first conductive film, a second conductive film provided on the inter-electrode insulating film and having a first metallic silicide film on a top surface thereof, first source/drain regions formed on a surface of the semiconductor substrate, a second insulating film provided on the semiconductor substrate in at least one of a selection gate transistor region and a peripheral transistor region, a third conductive film provided on the second insulating film and having a second metallic silicide film having a thickness smaller than a thickness of the first metallic silicide film on a top surface thereof, and a second source/drain regions formed on the surface of the semiconductor substrate.

1 . A semiconductor device comprising:
 a first insulating film provided on a semiconductor substrate in a cell transistor region;   a charge storage film provided on the first insulating film;   a second insulating film provided on the charge storage film;   a control gate electrode including a first conductive film and a second conductive film on the first conductive film, the first conductive film provided on the second insulating film, the second conductive film comprising a first metallic silicide film;   first source/drain regions formed on a surface of the semiconductor substrate and sandwiching a region under the first insulating film;   a third insulating film provided on the semiconductor substrate in a peripheral transistor region;   a gate electrode including a third conductive film and a fourth conductive film on the third conductive film, the third conductive film provided on the third insulating film, the fourth conductive film comprising of a polysilicon film and a second metallic silicide film on a top and a side surfaces of the poly silicon film;   second source/drain regions formed on the surface of the semiconductor substrate and sandwiching a region under the third insulating film.   
     
     
         2 . The device according to  claim 1 , wherein
 a thickness in a vertical direction of the second metallic silicide film on the side surface of the poly silicon film is equal to that of the first metallic silicide film.   
     
     
         3 . The device according to  claim 1 , wherein
 the gate electrode further including a fourth insulating film formed between the third conductive film and the fourth conductive film, the fourth insulating film has an opening, and the fourth conductive film is formed in the opening, and   the second metallic silicide film extends entirely over a top surface and side surfaces of the poly silicon film in the fourth conductive film.   
     
     
         4 . The device according to  claim 1 , wherein
 a width of the fourth conductive film is larger than that of the second conductive film.   
     
     
         5 . The device according to  claim 1 , further comprising
 a void which has an opening located at the upper surface of the side wall insulating film, and which extends to a middle of the side wall insulating film; and   a silicon oxide film which covers the upper and side surfaces of the second conductive film, and which covers the side wall insulating film.   
     
     
         6 . The device according to  claim 5 , wherein
 the silicon oxide film is formed in the void.   
     
     
         7 . A semiconductor device comprising:
 a first insulating film provided on a semiconductor substrate in a peripheral transistor region;   a first conductive film provided on the first insulating film;   a first inter-electrode insulating film provided on the first conductive film;   a second conductive film provided on the first inter-electrode insulating film and having a first metallic silicide film on a top surface and side surfaces thereof, a thickness in a vertical direction of the first metallic silicide film on each side surface of the second conductive film being thicker than that of the first metallic silicide film at the center of the second conductive film;   first source/drain regions formed on the surface of the semiconductor substrate and sandwiching a region under the first insulating film; and   a side wall insulating film formed on a side surface of the first and second conductive films.   
     
     
         8 . The device according to  claim 7 , further comprising:
 a second insulating film provided on the semiconductor substrate in a cell transistor region;   a third conductive film provided on the second insulating film;   a second inter-electrode insulating film provided on the third conductive film; and   a fourth conductive film which is provided on the second inter-electrode insulating film and in which an entire part extending in a vertical direction from a top surface by a first thickness is constituted of a second metallic silicide film.   
     
     
         9 . The device according to  claim 8 , wherein
 a thickness in the vertical direction of the first metallic silicide film on each side surface of the second conductive film is equal to the first thickness.   
     
     
         10 . The device according to  claim 8 , wherein
 a width of the fourth conductive film is narrower than that of the second conductive film.   
     
     
         11 . The device according to  claim 1 , wherein
 the second metallic silicide film has an upside-down concave shape.   
     
     
         12 . The device according to  claim 7 , wherein
 the first metallic silicide film has an upside-down concave shape.