Semiconductor component arrangement and method for producing thereof

Abstract

A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.

1 . A semiconductor component arrangement comprising at least one power semiconductor component and at least one logic component integrated in a semiconductor body having a first side, said logic component comprising:
 a trench extending into the semiconductor body proceeding from the first side;   at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; and   at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.   
     
     
         2 . The semiconductor component arrangement of  claim 1 , wherein a first and a second source zone, a first and a second drain zone and also a first and a second body zone are formed along the trench. 
     
     
         3 . The semiconductor component arrangement of  claim 2 , wherein the first and second drain zones are electrically conductively connected to one another. 
     
     
         4 . The semiconductor component arrangement of  claim 1 , wherein, in the trench, a first gate electrode is arranged adjacent to the first body zone and a second gate electrode is arranged adjacent to the second body zone. 
     
     
         5 . A method for producing a semiconductor component arrangement comprising:
 providing a semiconductor body having a first side and a second side and having a doped zone of a first conduction type;   producing at least one trench in the doped zone proceeding from the first side;   producing at least one drain zone and at least one source zone in such a way that they are arranged in the doped zone around the trench and in a manner adjoining the trench and are separated from one another by a body zone;   producing a dielectric layer in the trench; and   producing at least one gate electrode in the trench, said at least one gate electrode being arranged adjacent to the at least one body.   
     
     
         6 . The method of  claim 5 , comprising producing at least one of the drain and source zones by a dopant implantation at an angle with respect to the vertical that is different than 0°. 
     
     
         7 . The method of  claim 5 , wherein at least one of the drain and source zones are produced by:
 partially filling of the trench with a material containing dopant atoms; and   diffusing dopant atoms via sidewalls of the trench into the semiconductor body.   
     
     
         8 . A semiconductor component arrangement comprising at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body, said logic component comprising:
 a trench extending into semiconductor body proceeding from a first side;   at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; and   at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a longitudinal direction of the trench and between which at least one body zone of a second conduction type is arranged.   
     
     
         9 . A semiconductor component arrangement comprising at least one logic component integrated in a semiconductor body, having a first side, the logic component comprising:
 a trench extending into the semiconductor body proceeding from the first side;   at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; and   at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.   
     
     
         10 . The semiconductor component arrangement of  claim 9 , wherein a first and a second source zone, a first and a second drain zone and also a first and a second body zone are formed along the trench. 
     
     
         11 . The semiconductor component arrangement of  claim 10 , wherein the first and second drain zones are electrically conductively connected to one another. 
     
     
         12 . The semiconductor component arrangement of  claim 9 , wherein, in the trench, a first gate electrode is arranged adjacent to the first body zone and a second gate electrode is arranged adjacent to the second body zone. 
     
     
         13 . The semiconductor component arrangement of  claim 9 , wherein the power semiconductor component is a trench MOSFET. 
     
     
         14 . A semiconductor component body comprising:
 a power semiconductor component integrated in the semiconductor body;   a trench extending into the semiconductor body for a first surface;   a gate electrode configured in the trench;   a gate dielectric arranged to insulate the gate electrode from the semiconductor body;   a source zone of a first conduction type in the semiconductor body and adjacent the gate dielectric;   a drain zone of a first conduction type in the semiconductor body, adjacent the gate dielectric and spaced apart from the source zone in a peripheral direction relative to the trench; and   a body zone of a second conduction type between the source drain, wherein the gate electrode, gate dielectric, source zone, drain zone and body zone together from a logic component.   
     
     
         15 . The semiconductor component body of  claim 14 , wherein a first and a second source zone, a first and a second drain zone and also a first and a second body zone are formed along the trench. 
     
     
         16 . The semiconductor component body of  claim 15 , wherein the first and second drain zones are electrically conductively connected to one another. 
     
     
         17 . The semiconductor component body of  claim 14 , wherein, in the trench, a first gate electrode is arranged adjacent to the first body zone and a second gate electrode is arranged adjacent to the second body zone. 
     
     
         18 . The semiconductor component body of  claim 14 , wherein the power semiconductor component is a trench MOSFET.