US2011279014A1PendingUtilityA1

Oled device with embedded chip driving

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Assignee: WINTERS DUSTIN LPriority: Aug 14, 2008Filed: Jul 27, 2011Published: Nov 17, 2011
Est. expiryAug 14, 2028(~2.1 yrs left)· nominal 20-yr term from priority
H10K 59/129H10K 10/46H10K 59/123H10K 59/131H10K 59/1201H10K 59/38
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Claims

Abstract

An electroluminescent device having a plurality of current driven pixels arranged in rows and columns, such that when current is provided to a pixel it produces light, including each pixel having first and second electrodes and current responsive electroluminescent media disposed between the first and second electrodes; at least one chiplet having a thickness less than 20 micrometers; including transistor drive circuitry for controlling the operation of at least four pixels, the chiplet being mounted on a substrate and having connection pads; a planarization layer disposed over at least a portion of the chiplet; a first conductive layer over the planarization layer and connected to at least one of the connection pads; and a structure for providing electrical signals through the first conductive layer and at least one of the connection pads of the chiplet so that the transistor drive circuitry of the chiplet controls current to the four pixels.

Claims

exact text as granted — not AI-modified
1 - 16 . (canceled) 
     
     
         17 . An electroluminescent device having a plurality of current driven pixels disposed over a substrate, such that when current is provided to a pixel it produces light, comprising:
 (a) each pixel having first and second electrodes and a current responsive electroluminescent media disposed between the first and second electrodes;   (b) a plurality of chip lets, each chip let having a thickness less than 20 micrometers and each chiplet mounted over the substrate for controlling the operation of at least four pixels, wherein each chiplet comprises:
 (i) a semiconductor layer having doped regions forming source and drain regions and having a thickness of less than 10 micrometers; 
 (ii) at least one insulator layer over the semiconductor layer; 
 (iii) a first chip let conductor layer arranged to form gate electrodes that correspond to the source and drain regions in the semiconductor layer thereby forming a plurality of transistors; 
 (iv) a second chiplet conductor layer for providing electrical connection between the plurality of transistors to form drive circuits; and 
 (v) a plurality of connection pads electrically connected to the drive circuits for transmitting current from the drive circuits to corresponding pixels in the electroluminescent display wherein the chiplet is mounted such that the connection pads are over the semiconductor layer and over the substrate. 
   
     
     
         18 . The chiplet of  claim 17  comprising:
 (i) a semiconductor layer having doped regions forming source and drain regions and having a thickness of less than 10 micrometers; 
 (ii) at least one insulator layer over the semiconductor layer; 
 (iii) a first chiplet conductor layer arranged to form gate electrodes that correspond to the source and drain regions in the semiconductor layer thereby forming a plurality of transistors; and 
 (iv) a second chiplet conductor layer for providing electrical connection between transistors for forming drive circuits. 
 
     
     
         19 . The chiplet of  claim 18  wherein the connection pads include a first connection pad for connection to the power supply lines and a second connection pad for connection to the select lines and the transistors include a p-channel driving transistor formed in a doped well where the source region of the p-channel driving transistor is electrically connected to the doped well and the first connection pad. 
     
     
         20 . The chiplet of  claim 19  further comprising one or more diodes connected between the second connection pads and the first connection pads. 
     
     
         21 . A chiplet for operating an electroluminescent element comprising:
 (a) a semiconductor layer having a doped well;   (b) a first driving transistor having a doped source region and doped drain region formed in the doped well region of the semiconductor layer;   (c) a first connection pad for connection to the electroluminescent element and electrically connected to one of either the doped source region or the doped drain region of the first driving transistor;   (d) a connection pad for receiving power and electrically connected to doped well region and the other one of either the doped source region or the doped drain region of the first driving transistor.   
     
     
         22 . (canceled) 
     
     
         23 . A method for making a colored organic electroluminescent device comprising:
 (a) forming color filter on a substrate;   (b) mounting a chip let on the substrate, the chip let including transistor drive circuitry for controlling the operation of a plurality of pixels;   (c) forming a planarization layer over the chip let and the color filter; and   (d) forming a electroluminescent media over the planarization layer and the color filter; and   (e) electrically connecting to the chip let to the electroluminescent media.   
     
     
         24 . The method of  claim 23  wherein the chip let has a thickness of 20 micrometers or less. 
     
     
         25 . The method of  claim 23  wherein the color filter is formed prior to mounting the chiplet.

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