US2011284869A1PendingUtilityA1

High Voltage Durability III-Nitride HEMT

Assignee: BRIERE MICHAEL APriority: Nov 26, 2008Filed: Aug 3, 2011Published: Nov 24, 2011

Est. expiryNov 26, 2028(~2.4 yrs left)· nominal 20-yr term from priority

Inventors:Michael A. Briere

H10D 62/8503H10D 62/405H10D 30/4755H10D 30/475H10D 30/015H10D 84/08H10D 30/47

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Claims

Abstract

A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT.

Claims

exact text as granted — not AI-modified

1 - 18 . (canceled) 
     
     
         19 . A high voltage durability, high electron mobility transistor (HEMT), said high voltage durability HEMT comprising:
 a support substrate including a &lt;100&gt; silicon layer, an insulator layer over said &lt;100&gt; silicon layer, and a P type conductivity &lt;111&gt; silicon layer over said insulator layer;   a III-nitride semiconductor body formed over said P type conductivity &lt;111&gt; silicon layer, said III-nitride semiconductor body forming a heterojunction of said HEMT.   
     
     
         20 . The high voltage durability HEMT of  claim 19 , wherein a breakdown voltage of said HEMT is greater than 800 volts. 
     
     
         21 . The high voltage durability HEMT of  claim 19 , wherein said III-nitride semiconductor body comprises aluminum gallium nitride (AlGaN) situated over gallium nitride (GaN). 
     
     
         22 . The high voltage durability HEMT of  claim 19 , wherein said &lt;100&gt; silicon layer has N type conductivity. 
     
     
         23 . The high voltage durability HEMT of  claim 19 , wherein said &lt;100&gt; silicon layer has P type conductivity. 
     
     
         24 . The high voltage durability HEMT of  claim 22 , further comprising a silicon semiconductor device formed on said &lt;100&gt; silicon layer. 
     
     
         25 . The high voltage durability HEMT of  claim 24 , wherein said silicon semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET). 
     
     
         26 . The high voltage durability HEMT of  claim 23 , further comprising a silicon semiconductor device formed on said &lt;100&gt; silicon layer. 
     
     
         27 . The high voltage durability HEMT of  claim 26 , wherein said silicon semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET). 
     
     
         28 . The high voltage durability HEW of  claim 19 , wherein said III-nitride body comprises a PMOS device. 
     
     
         29 . The high voltage durability HEMT of  claim 19 , further comprising power electrodes formed over said III-nitride semiconductor body. 
     
     
         30 . The high voltage durability HEMT of  claim 29 , further comprising a gate situated between said power electrodes. 
     
     
         31 . The high voltage durability HEMT of  claim 30 , wherein said III-nitride body includes a III-nitride heterojunction having a two-dimensional electron gas that includes an interrupted region under said gate. 
     
     
         32 . A high voltage durability, high electron mobility transistor (HEMT), said high voltage durability HEMT comprising:
 a support substrate including a &lt;100&gt; silicon layer, an insulator layer over said &lt;100&gt; silicon layer, and an N type conductivity &lt;111&gt; silicon layer over said insulator layer;   a III-nitride semiconductor body formed over said N type conductivity &lt;111&gt; silicon layer, said III-nitride semiconductor body forming a heterojunction of said HEMT.   
     
     
         33 . The high voltage durability HEMT of  claim 32 , wherein a breakdown voltage of said HEMT is greater than 800 volts. 
     
     
         34 . The high voltage durability HEMT of  claim 32 , wherein said III-nitride semiconductor body comprises aluminum gallium nitride (AlGaN) situated over gallium nitride (GaN). 
     
     
         35 . The high voltage durability HEMT of  claim 32 , wherein said &lt;100&gt; silicon layer has N type conductivity. 
     
     
         36 . The high voltage durability HEMT of  claim 32 , wherein said &lt;100&gt; silicon layer has P type conductivity. 
     
     
         37 . The high voltage durability HEMT of  claim 35 , further comprising a silicon semiconductor device formed on said &lt;100&gt; silicon layer. 
     
     
         38 . The high voltage durability HEMT of  claim 36 , further comprising a silicon semiconductor device formed on said &lt;100&gt; silicon layer.

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